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PDF EMB28C04G Data sheet ( Hoja de datos )
| Número de pieza | EMB28C04G | |
| Descripción | Field Effect Transistor | |
| Fabricantes | Excelliance MOS | |
| Logotipo |  |
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N & P‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
RDSON (MAX.)
N‐CH
40V
28mΩ
P‐CH
‐40V
44mΩ
D1
G1
D2
G2
ID
7A ‐6A
S1 S2
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Gate‐Source Voltage
VGS
Continuous Drain Current
Pulsed Drain Current1
TA = 25 °C
TA = 70 °C
Power Dissipation
TA = 25 °C
TA = 70 °C
Operating Junction & Storage Temperature Range
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
Junction‐to‐Case
RJC
Junction‐to‐Ambient
RJA
1Pulse width limited by maximum junction temperature.
2Duty cycle 1％
2013/9/3
ID
IDM
PD
Tj, Tstg
TYPICAL
EMB28C04G
LIMITS
N‐CH
P‐CH
±20 ±20
7 ‐6
6 ‐5
28 ‐24
2
1.3
‐55 to 150
UNIT
V
A
W
°C
MAXIMUM
25
62.5
UNIT
°C / W
p.1
1 page  
N‐Channel
25
On‐Region Characteristics
VG S = 10V
8.0V
20
7.0V
15
10
5
6.0V
5.0V
4.5V
0
01
2
34
VD S ‐ Drain‐Source Voltage(V)
5
1.9
On‐Resistance Variation with Temperature
I D = 7A
VG S = 10V
1.6
1.3
1.0
0.7
0.4
‐50 ‐25
0 25 50 75 100 125 150
T J ‐ Junction Temperature (°C)
18
Transfer Characteristics
VD S = 10V
15
12
9
T A = ‐55°C
25°C
6
3
0
3
125°C
4 56
VG S ‐ Gate‐Source Voltage( V )
7
2013/9/3
EMB28C04G
On‐Resistance Variation with Drain Current and Gate Voltage
1.7
VG S = 4.5 V
1.6
5.0 V
1.5
1.4
6.0 V
1.3
7.0 V
1.2
8.0 V
1.1
10 V
1.0
0.9
0
5 10 15
I D ‐ Drain Current( A )
20
25
0.09
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.01
2
On‐Resistance Variation with Gate‐Source Voltage
I D = 3.5A
TA = 125°C
TA = 25°C
46
8
VG S ‐ Gate‐Source Voltage( V )
10
Body Diode Forward Voltage Variation
with Source Current and Temperature
100
10 VG S = 0V
1
0.1 TA = 125°C 25°C
0.01
‐55°C
0.001
0
0.2 0.4
0.6 0.8 1.0 1.2
VS D ‐ Body Diode Forward Voltage( V )
1.4
p.5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet EMB28C04G.PDF ] | |
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