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Teilenummer | EMB99A0G |
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Beschreibung | Field Effect Transistor | |
Hersteller | Excelliance MOS | |
Logo | ||
Gesamt 8 Seiten 2N & 2P‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
N‐CH P‐CH
BVDSS
RDSON (MAX.)
100V ‐100V
250mΩ 300mΩ
ID
2.2A
‐1.7A
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Gate‐Source Voltage
VGS
Continuous Drain Current
Pulsed Drain Current1
TA = 25 °C
TA = 100 °C
Power Dissipation
TA = 25 °C
TA = 100 °C
Operating Junction & Storage Temperature Range
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
Junction‐to‐Case
RJC
Junction‐to‐Ambient3
RJA
1Pulse width limited by maximum junction temperature.
2Duty cycle 1%
390°C / W when mounted on a 1 in2 pad of 2 oz copper.
2012/5/8
ID
IDM
PD
Tj, Tstg
TYPICAL
EMB99A0G
LIMITS
N‐CH
P‐CH
±20 ±20
2.2 ‐1.7
1.8 ‐1.4
8.8 ‐6.8
1.38
0.75
‐55 to 150
UNIT
V
A
W
°C
MAXIMUM
36
90
UNIT
°C / W
p.1
10
Gate Charge Characteristics
I D = 2.2A
8
6
4
VD S = 25V 50V
2
0
0
5 10
Q g ‐ Gate Charge( nC )
15
20
100
Maximum Safe Operating Area
10
1 R D S (O N )Limit
0.1
10uS
100uS
1mS
10mS
100mS
DC
VG S = 10V
Single Pulse
R JA = 90°C/W
TA = 25°C
0.01
0.1 1 10 100
VD S ‐ Drain‐Source Voltage( V )
1000
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
Transient Thermal Response Curve
0.02
0.01
0.01
Single Pulse
0.001
10 ‐4
10 ‐3
10 ‐2
10 ‐1
t 1 ,Time (sec)
1
2012/5/8
EMB99A0G
1000
900
800
Capacitance Characteristics
f = 1M Hz
Ciss V G S = 0 V
700
600
500
400
300
200
100
0
0
Coss
Crss
20 40 60 80
VD S ‐ D rain‐Source Voltage( V )
100
Single Pulse Maximum Power Dissipation
50
Single Pulse
Rθ J A = 90°C/W
40 TA = 25°C
30
20
10
0
0.001
0.01 0.1 1 10
t 1 ,Time ( sec )
100 1000
Notes:
P DM
t1
t2
1.Duty Cycle,D =
t1
t2
2.Rθ J A =90°C/W
3.TJ ‐ TA = P * Rθ J A (t)
4.Rθ J A (t)=r(t) + RθJA
10 100
1000
p.6
6 Page | ||
Seiten | Gesamt 8 Seiten | |
PDF Download | [ EMB99A0G Schematic.PDF ] |
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