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Número de pieza | GS61008P | |
Descripción | 100V enhancement mode GaN transistor | |
Fabricantes | GaN Systems | |
Logotipo | ||
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No Preview Available ! GS61008P
100V enhancement mode GaN transistor
PRELIMINARY DATASHEET
Features
– 100V enhancement mode power switches
– Ultra low FOM Island Technology™ die
– Low inductance GaNPX™ package
– Footprint compatible family
– Reverse current capability
– Zero reverse recovery loss
– Source-sense for optimal high speed design
– RoHS 6 compliant
Applications
– 48V DC-DC conversion
– AC-DC power supplies (secondary)
– VHF very small form-factor AC-DC Adapter
– Appliances and power tools
G
SS
top view
DD
TP
G
S TP = thermal pad
SS S
Absolute Maximum Ratings (Tcase = 25˚C except as noted)
Parameters
Operating Junction Temperature
Storage Temperature Range
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current (Tcase=25°C) (Note 1)
Continuous Drain Current (Tcase=100°C)
Pulsed Drain Current (Tcase=25°C)
(1) Limited by saturation
Symbol
TJ
TS
VDS
VGS
IDS(cont)25
IDS(cont)100
IDS(pulse)25
Value
-55 to +150
-55 to +150
100
±10
90
60
135
Unit
°C
°C
V
V
A
Thermal Characteristics (Typical values unless otherwise noted)
Parameter
Symbol
Value
Units
Thermal Resistance (junction to case)
Thermal Resistance (junction to ambient) (Note 2)
RΘJC
0.55
°C /W
RΘJA
55
Maximum Soldering Temperature (MSL3 rated)
TSOLD
260 °C
(2) Device mounted on 40mm x 40mm x 1.5mm single layer epoxy PCB FR4 with 6cm2 copper area (thickness 70μm) for thermal pad
connection. PCB is vertical without air stream cooling.
Ordering information
Part number
GS61008P
GS61008P
Package type
GaNPX
GaNPX
Ordering code
GS61008P-TR
GS61008P-MR
Packing method
Tape-and-reel
Mini-reel
Preliminary – Rev 150405
© 2009-2015 GaN Systems Inc.
1
This information applies to a product under development. Its characteristics and specifications are subject to change without notice.
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PDF Descargar | [ Datasheet GS61008P.PDF ] |
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GS61008P | 100V enhancement mode GaN transistor | GaN Systems |
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