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Número de pieza | WFP2N60 | |
Descripción | N-Channel MOSFET | |
Fabricantes | Wisdom technologies | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de WFP2N60 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
No Preview Available ! HIGH VOLTAGE N-Channel MOSFET
WFP2N60
600V N-Channel MOSFET
Features
□ Low Intrinsic Capacitances
□ Excellent Switching Characteristics
□ Extended Safe Operating Area
□ Unrivalled Gate Charge :Qg= 8.5nC (Typ.)
□ BVDSS=600V,ID=2A
□ RDS(on) : 5 Ω (Max) @VG=10V
□ 100% Avalanche Tested
GDS
D
!
G!
●
◀▲
●
●
!
S
TO‐220
G‐Gate,D‐Drain,S‐Sourse
Absolute Maximum Ratings Tc=25℃ unless other wise noted
Symbol
VDSS
ID
VGS
EAS
IAR
PD
TJ,TSTG
TL
Parameter
Drain-Sourse Voltage
Drain Current
-continuous (Tc=25℃)
-continuous (Tc=100℃)
Gate-Sourse Voltage
Single Plused Avanche Energy (Note1)
Avalanche Current
(Note2)
Power Dissipation (Tc=25℃)
Operating and Storage Temperature Range
Maximum lead temperature for soldering
purpose,1/8” from case for 5 seconds
WFP2N60
600
2
1.5
±30
120
2
54
-55 ~ +150
300
Units
V
A
A
V
mJ
A
W
℃
℃
Thermal Characteristics
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance,Junction to Case
Thermal Resistance,Case to Sink
Thermal Resistance,Junction to Ambient
Typ.
--
0.5
--
Max
1.95
--
62.5
Units
℃/W
℃/W
℃/W
www.wisdom-technologies .com
Rev.A0,August , 2010 |
1
1 page HIGH VOLTAGE N-Channel MOSFET
Gate Charge Test Circuit & Waveform
Same Type
50KΩ
as DUT
12V 200nF
300nF
VGS
10V
Qg
VGS
VDS
Qgs Qgd
DUT
3mA
Charge
Resistive Switching Test Circuit & Waveforms
10V
VDS
VGS
RG
RL
VDD
DUT
VDS
90%
VGS 10%
td(on)
tr
t on
td(off)
tf
t off
Unclamped Inductive Switching Test Circuit & Waveforms
VDS
ID
RG
L
EAS =
--1--
2
L IAS2
BVDSS
--------------------
BVDSS - VDD
BVDSS
IAS
VDD ID (t)
10V
tp
DUT
VDD VDS (t)
t p Time
www.wisdom-technologies .com
Rev.A0,August , 2010 |
5
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet WFP2N60.PDF ] |
Número de pieza | Descripción | Fabricantes |
WFP2N60 | N-Channel MOSFET | Wisdom technologies |
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