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Teilenummer | WFP12N60 |
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Beschreibung | N-Channel MOSFET | |
Hersteller | Wisdom technologies | |
Logo | ||
Gesamt 6 Seiten HIGH VOLTAGE N-Channel MOSFET
WFP12N60
600V N-Channel MOSFET
Features
□ Low Intrinsic Capacitances
□ Excellent Switching Characteristics
□ Extended Safe Operating Area
□ Unrivalled Gate Charge :Qg= 37nC (Typ.)
□ BVDSS=600V,ID=12A
□ RDS(on) :0.65 Ω (Max) @VG=10V
□ 100% Avalanche Tested
GDS
D
!
●
G!
◀▲
●
●
!
S
TO‐220
G‐Gate,D‐Drain,S‐Sourse
Absolute Maximum Ratings Tc=25℃ unless other wise noted
Symbol
VDSS
ID
VGS
EAS
IAR
PD
TJ,TSTG
TL
Parameter
Drain-Sourse Voltage
Drain Current
-continuous (Tc=25℃)
-continuous (Tc=100℃)
Gate-Sourse Voltage
Single Plused Avanche Energy
(Note1)
Avalanche Current
(Note2)
Power Dissipation (Tc=25℃)
Operating and Storage Temperature Range
Maximum lead temperature for soldering
purpose,1/8” from case for 5 seconds
WFP12N60
600
12
6.7
±30
870
12
225
-55 ~ +150
300
Units
V
A
A
V
mJ
A
W
℃
℃
Thermal Characteristics
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance,Junction to Case
Thermal Resistance,Case to Sink
Thermal Resistance,Junction to Ambient
Typ.
--
0.5
--
Max
0.7
--
62.5
Units
℃/W
℃/W
℃/W
www.wisdom-technologies.com
Rev.A0,August , 2010 |
1
HIGH VOLTAGE N-Channel MOSFET
Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+
VDS
_
I SD
L
Driver
RG
VGS
Same Type
as DUT
• dv/dt controlled by RG
• ISD controlled by pulse period
VDD
VGS
( Driver )
I SD
( DUT )
VDS
( DUT )
D
=
--G--a--t-e--P--u--l-s-e---W---i-d-t-h--
Gate Pulse Period
10V
IFM , Body Diode Forward Current
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VSD
Body Diode
Forward Voltage Drop
VDD
www.wisdom-technologies .com
Rev.A0,August , 2010 |
6
6 Page | ||
Seiten | Gesamt 6 Seiten | |
PDF Download | [ WFP12N60 Schematic.PDF ] |
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