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WFP12N60 Schematic ( PDF Datasheet ) - Wisdom technologies

Teilenummer WFP12N60
Beschreibung N-Channel MOSFET
Hersteller Wisdom technologies
Logo Wisdom technologies Logo 




Gesamt 6 Seiten
WFP12N60 Datasheet, Funktion
HIGH VOLTAGE N-Channel MOSFET 
 
 
WFP12N60
600V N-Channel MOSFET
Features
Low Intrinsic Capacitances 
Excellent Switching Characteristics 
Extended Safe Operating Area 
Unrivalled Gate Charge :Qg= 37nC (Typ.)
BVDSS=600V,ID=12A
RDS(on) :0.65 (Max) @VG=10V
100% Avalanche Tested
GDS
D
!
G!
◀▲
 
!
S
TO220   
GGate,DDrain,SSourse 
 
Absolute Maximum Ratings Tc=25unless other wise noted
Symbol
VDSS
ID
VGS
EAS
IAR
PD
TJ,TSTG
TL
Parameter
Drain-Sourse Voltage
Drain Current
-continuous (Tc=25)
-continuous (Tc=100)
Gate-Sourse Voltage
Single Plused Avanche Energy
(Note1)
Avalanche Current
(Note2)
Power Dissipation (Tc=25)
Operating and Storage Temperature Range
Maximum lead temperature for soldering
purpose,1/8” from case for 5 seconds
WFP12N60
600
12
6.7
±30
870
12
225
-55 ~ +150
300
Units
V
A
A
V
mJ
A
W
Thermal Characteristics 
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance,Junction to Case
Thermal Resistance,Case to Sink
Thermal Resistance,Junction to Ambient
Typ.
--
0.5
--
Max
0.7
--
62.5
Units
/W
/W
/W
www.wisdom-technologies.com  
    Rev.A0,August , 2010 | 
1 
 






WFP12N60 Datasheet, Funktion
HIGH VOLTAGE N-Channel MOSFET 
Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+
VDS
_
I SD
L
Driver
RG
VGS
Same Type
as DUT
• dv/dt controlled by RG
• ISD controlled by pulse period
VDD
VGS
( Driver )
I SD
( DUT )
VDS
( DUT )
D
=
--G--a--t-e--P--u--l-s-e---W---i-d-t-h--
Gate Pulse Period
10V
IFM , Body Diode Forward Current
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VSD
Body Diode
Forward Voltage Drop
VDD
www.wisdom-technologies  .com  
    Rev.A0,August , 2010 | 
6 
 

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