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PDF C2M0280120D Data sheet ( Hoja de datos )
| Número de pieza | C2M0280120D | |
| Descripción | Silicon Carbide Power MOSFET | |
| Fabricantes | Cree | |
| Logotipo |  |
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VDS 1200 V
C2M0280120D
Silicon Carbide Power MOSFET
TM
C2M MOSFET Technology
ID @ 25˚C 10 A
RDS(on)
280 mΩ
N-Channel Enhancement Mode
Features
Package
• New C2M SiC MOSFET technlogy
• High Blocking Voltage with Low On-Resistance
• High Speed Switching with Low Capacitances
• Easy to Parallel and Simple to Drive
• Avalanche Ruggedness
• Resistant to Latch-Up
• Halogen Free, RoHS Compliant
Benefits
TO-247-3
• Higher System Efficiency
• Reduced Cooling Requirements
• Increased Power Density
• Increased System Switching Frequency
Applications
• LED Lighting Power Supplies
• High Voltage DC/DC Converters
• Industrial Power Supplies
• HVAC
Part Number
C2M0280120D
Package
TO-247-3
Maximum Ratings (TC = 25 ˚C unless otherwise specified)
Symbol
Parameter
Value Unit
Test Conditions
Note
VDSmax
VGSmax
VGSop
Drain - Source Voltage
Gate - Source Voltage
Gate - Source Voltage
ID Continuous Drain Current
1200
-10/+25
-5/+20
10
6
V VGS = 0 V, ID = 100 μA
V Absolute maximum values
V Recommended operational values
A VGS = 20 V, TC = 25 °C
VGS = 20 V, TC = 100 °C
Fig. 19
ID(pulse) Pulsed Drain Current
20 A Pulse width tP limited by Tjmax
Fig. 22
PD Power Dissipation
TJ , Tstg Operating Junction and Storage Temperature
TL Solder Temperature
Md Mounting Torque
62.5
-55 to
+150
260
1
8.8
W TC=25 °C, TJ = 150 °C
˚C
Fig. 20
˚C 1.6 mm (0.063”) from case for 10s
Nm
lbf-in
M3 or 6-32 screw
1 C2M0280120D Rev. A
1 page  
Typical Performance
-6 -5
Conditions:
TJ = -55 °C
tp < 200 µs
-4 -3 -2
VGS = 0 V
VGS = 5 V
-1
VGS = 10 V
VGS = 15 V
VGS = 20 V
Drain-Source Voltage, VDS (V)
0
0
-2
-4
-6
-8
-10
-12
-14
-16
Figure 13. 3rd Quadrant Characteristic at -55 ºC
-6 -5
Conditions:
TJ = 150 °C
tp < 200 µs
-4 -3 -2 -1
VGS = 0 V
VGS = 15 V
VGS = 10 V
VGS = 5 V
VGS = 20 V
Drain-Source Voltage, VDS (V)
0
0
-2
-4
-6
-8
-10
-12
-14
-16
Figure 15. 3rd Quadrant Characteristic at 150 ºC
1000
Conditions:
TJ = 25 °C
Ciss VAC = 25 mV
f = 1 MHz
100
Coss
10
Crss
1
0 50 100 150
Drain-Source Voltage, VDS (V)
Figure 17. Capacitances vs. Drain-Source
Voltage (0-200 V)
200
-6 -5
Conditions:
TJ = 25 °C
tp < 200 µs
-4 -3 -2 -1
0
0
VGS = 0 V
VGS = 5 V
VGS = 10 V
-2
-4
-6
VGS = 15 V
-8
VGS = 20 V
-10
-12
-14
Drain-Source Voltage, VDS (V)
-16
Figure 14. 3rd Quadrant Characteristic at 25 ºC
14
12
10
8
6
4
2
0
0
200 400 600 800 1000
Drain to Source Voltage, VDS (V)
1200
Figure 16. Output Capacitor Stored Energy
1000
Conditions:
TJ = 25 °C
Ciss VAC = 25 mV
f = 1 MHz
100
Coss
10
Crss
1
0 200 400 600 800 1000
Drain-Source Voltage, VDS (V)
Figure 18. Capacitances vs. Drain-Source
Voltage (0-1000 V)
5 C2M0280120D Rev. A
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet C2M0280120D.PDF ] | |
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