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PDF CAT28C256-15 Data sheet ( Hoja de datos )

Número de pieza CAT28C256-15
Descripción 32K-Bit Parallel E2PROM
Fabricantes Catalyst Semiconductor 
Logotipo Catalyst Semiconductor Logotipo



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CAT28C256
32K-Bit Parallel E2PROM
FEATURES
s Fast Read Access Times: 120/150ns
s Low Power CMOS Dissipation:
–Active: 25 mA Max.
–Standby: 150 µA Max.
s Simple Write Operation:
–On-Chip Address and Data Latches
–Self-Timed Write Cycle with Auto-Clear
s Fast Write Cycle Time:
–5ms Max
s CMOS and TTL Compatible I/O
DESCRIPTION
The CAT28C256 is a fast, low power, 5V-only CMOS
parallel E2PROM organized as 32K x 8-bits. It requires a
simple interface for in-system programming. On-chip
address and data latches, self-timed write cycle with auto-
clear and VCC power up/down write protection eliminate
additional timing and protection hardware. DATA Polling
and Toggle status bits signal the start and end of the self-
timed write cycle. Additionally, the CAT28C256 features
hardware and software write protection.
s Hardware and Software Write Protection
s Automatic Page Write Operation:
–1 to 64 Bytes in 5ms
–Page Load Timer
s End of Write Detection:
–Toggle Bit
–DATA Polling
s 100,000 Program/Erase Cycles
s 100 Year Data Retention
s Commerical, Industrial and Automotive
Temperature Ranges
The CAT28C256 is manufactured using Catalyst’s ad-
vanced CMOS floating gate technology. It is designed to
endure 100,000 program/erase cycles and has a data
retention of 100 years. The device is available in JEDEC
approved 28-pin DIP, 28-pin TSOP or 32-pin PLCC
packages.
BLOCK DIAGRAM
A6–A14
VCC
CE
OE
WE
ADDR. BUFFER
& LATCHES
INADVERTENT
WRITE
PROTECTION
CONTROL
LOGIC
A0–A5
TIMER
ADDR. BUFFER
& LATCHES
ROW
DECODER
HIGH VOLTAGE
GENERATOR
DATA POLLING
AND
TOGGLE BIT
COLUMN
DECODER
32,768 x 8
E2PROM
ARRAY
64 BYTE PAGE
REGISTER
I/O BUFFERS
I/O0–I/O7
5096 FHD F02
© 1998 by Catalyst Semiconductor, Inc.
Characteristics subject to change without notice
1
Doc. No. 25020-0A 2/98

1 page




CAT28C256-15 pdf
CAT28C256
A.C. CHARACTERISTICS, Write Cycle
VCC=5V+10%, unless otherwise specified
Symbol Parameter
tWC Write Cycle Time
tAS Address Setup Time
tAH
tCS
tCH
tCW(3)
tOES
tOEH
tWP(3)
Address Hold Time
CE Setup Time
CE Hold Time
CE Pulse Time
OE Setup Time
OE Hold Time
WE Pulse Width
tDS Data Setup Time
tDH Data Hold Time
tINIT(1) Write Inhibit Period After Power-up
tBLC(1)(4) Byte Load Cycle Time
28C256-12
Min. Max.
5
0
50
0
0
100
0
0
100
50
10
5 10
0.1 100
28C256-15
Min. Max.
5
0
50
0
0
100
0
0
100
50
10
5 10
0.1 100
Units
ms
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ms
µs
Figure 1. A.C. Testing Input/Output Waveform(2)
2.4 V
0.45 V
INPUT PULSE LEVELS
2.0 V
0.8 V
REFERENCE POINTS
5096 FHD F03
Figure 2. A.C. Testing Load Circuit (example)
1.3V
1N914
DEVICE
UNDER
TEST
3.3K
OUT
CL = 100 pF
5096 FHD F04
Note:
CL INCLUDES JIG CAPACITANCE
(1) This parameter is tested initially and after a design or process change that affects the parameter.
(2) Input rise and fall times (10% and 90%) < 10 ns.
(3) A write pulse of less than 20ns duration will not initiate a write cycle.
(4) A timer of duration tBLC max. begins with every LOW to HIGH transition of WE. If allowed to time out, a page or byte write will begin;
however a transition from HIGH to LOW within tBLC max. stops the timer.
5 Doc. No. 25020-0A 2/98

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