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Número de pieza | RBR30T40ANZ | |
Descripción | Schottky Barrier Diode | |
Fabricantes | ROHM Semiconductor | |
Logotipo | ||
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No Preview Available ! Schottky Barrier Diode
RBR30T40ANZ
Application
General rectification
Dimensions (Unit : mm)
4.5±00..31
10.0±00..31
φ3.2±0.2
2.8±00..21
Datasheet
Structure
Features
1) Cathode common dual type
2) High reliability
3) Low VF
1.2
1.3
0.8
1
2.6±0.5
Construction
Silicon epitaxial planar type
2.45±0.5 2.45±0.5
(1) (2) (3)
ROHM : TO220FN
0.75±00..015
1 : Manufacture date
(1) (2) (3)
Anode Cathode Anode
Package Dimensions (Unit : mm)
7
540
Absolute Maximum Ratings (Tc= 25°C)
Parameter
Symbol
Repetitive Peak Reverse Voltage
Reverse Voltage
Average Forward Rectified Current
Non-repetitive Forward Current Surge Peak
VRM
VR
Io
IFSM
Operating Junction Temperature
Storage Temperature
Tj
Tstg
Conditions
Duty≦0.5
Direct Reverse Voltage
60Hz half sin Wave, resistive load,
IO/2 per diode, Tc=95°C Max.
60Hz half sin wave, Non-repetitive at
Ta=25°C, 1cycle, per diode
-
-
Limits Unit
40 V
40 V
30 A
100 A
150 °C
55 to 150 °C
Electrical and Thermal Characteristics (Tj = 25°C)
Parameter
Symbol
Conditions
Forward Voltage
VF IF=15A
Reverse Current
IR VR=40V
Thermal Resistance
Rth(j-c)
Junction to Case
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
1/5
Min. Typ. Max. Unit
- - 0.62 V
- - 360 A
- - 2 °C/W
2016.08 - Rev.A
1 page RBR30T40ANZ
Electrical Characteristic Curves
Data Sheet
10
Rth(j-a)
1 Rth(j-c)
IM=100mA
IF=20A
time
0.1
0.001 0.01 0.1
1ms300s
1 10 100 1000
TIME : t (s)
Rth-t CHARACTERISTICS
80
70
60
50
DC
40
IO
0A
0V
VR t
T
D=t/T
VR=VRM/2
Tj=150°C
D = 1/2
30
20
10 Sin(θ=180)
0
0 25 50 75 100 125 150
AMBIENT TEMPERATURE : Ta (°C)
DERATING CURVE (Io-Ta)
80
70
60 DC
50
40 D = 1/2
IO
0A
0V
VR t
T
D=t/T
VR=VRM/2
Tj=150°C
30
20 Sin(θ=180)
10
0
0 25 50 75 100 125
CASE TEMPERATURE : Tc (°C)
DERATING CURVE (Io-Tc)
150
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
5/5
2016.08 - Rev.A
5 Page |
Páginas | Total 8 Páginas | |
PDF Descargar | [ Datasheet RBR30T40ANZ.PDF ] |
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