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RBV2502 Schematic ( PDF Datasheet ) - Galaxy Microelectronics

Teilenummer RBV2502
Beschreibung Silicon Bridge Rectifiers
Hersteller Galaxy Microelectronics
Logo Galaxy Microelectronics Logo 




Gesamt 3 Seiten
RBV2502 Datasheet, Funktion
Production specification
Silicon Bridge Rectifiers
RBV25005--RBV2510
FEATURES
Rating to 1000V PRV
Surge overload rating to 300 Amperes peak
Ideal for printed circuit board
Reliable low cost construction utilizing molded
Pb
Lead-free
plastic technique results in inexpensive product
Lead solderable per MIL-STD-202 method 208
MECHANCAL DATA
Polarity: Symbols molded on body
Weight: 0.23 ounces,6.6 grams
Mounting position: Any
Maximum Ratings(@TA = 25°C unless otherwise specified)
Characteristic
Symbol
RBV
25005
RBV
2501
RBV
2502
RBV
2504
RBV
2506
RBV
2508
RBV
2510
UNITS
Maximum recurrent peak reverse voltage
VRRM
50 100 200 400 600 800 1000
V
Maximum RMS voltage
VRMS
35 70 140 280 420 560 700
V
Maximum DC blocking voltage
VDC
50 100 200 400 600 800 1000
V
Maximum average forward Output current @TA=25
IF(AV)
25
A
Peak forward surge current
8.3ms single half-sine-wave
superimposed on rated load
Thermal Characteristics
IFSM
300
Characteristic
Symbol
RBV
25005
RBV
2501
RBV
2502
RBV
2504
RBV
2506
Typical junction capacitance per element
CJ
85
Typical thermal resistance
RθJC
0.6
Operating junction temperature range
TJ
- 55 ---- + 150
Storage temperature range
TSTG
- 55 ---- + 150
Electrical Characteristics(@TA = 25°C unless otherwise specified)
RBV
2508
RBV
2510
A
UNITS
pF
/W
Characteristic
Symbol
RBV
25005
RBV
2501
Maximum instantaneous forward voltage @12.5A
VF
Maximum reverse current @TA=25
at rated DC blocking voltage
@TA=100
IR
RBV
2502
RBV
2504
1.1
10.0
0.2
RBV
2506
RBV
2508
RBV
2510
UNITS
V
μA
mA
Document Number: KJ6813AA
www.gmicroelec.com
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