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WTF16A60-S Schematic ( PDF Datasheet ) - Winsemi

Teilenummer WTF16A60-S
Beschreibung Bi-Directional Triode Thyristor
Hersteller Winsemi
Logo Winsemi Logo 




Gesamt 5 Seiten
WTF16A60-S Datasheet, Funktion
Features
Repetitive Peak off -State Voltage:600V
R.M.S On-State Current(IT(RMS)=16A)
Isolation voltage(VISO=1500V AC)
High Commutation dv/dt
WTF16A60-S
Bi-Directional Triode Thyristor
General Description
This device is fully isolated package suitable for AC switching
application,phase control application such as fan speed and
temperature modulation control, lighting control and static
switching relay.This device is approved to comply with applicable
requirements by Underwriters Laboratories Inc.
By using an internal ceramic pad, the TO220F series provides
voltage insulated tab (rated at 2500V RMS) complying with UL
standards (file ref.:E347423)
Absolute Maximum Ratings (TJ=25℃ unless otherwise specified)
symbol
Parameter
Ratings Units
VDRM
IT(RMS)
Peak Repetitive Forward Blocking Voltage(gate open) (Note1)
Forward Current RMS(All Conduction Angles, TJ=68℃)
600 V
16 A
ITSM Peak Forward Surge Current, (1/2 Cycle, Sine Wave,50/60Hz)
155/170
A
I2t Circuit Fusing Considerations (tp=10ms)
120 A2s
PGM Peak Gate Power —Forward,(TC=68,Pulse With≤1.0us)
5.0 W
PG(AV)
IFGM
VRGM
TJ
Tstg
Average Gate Power —Forward,(Over any 20ms period)
Peak Gate Current—Forward,TJ=125℃(20µs,120PPS)
Peak Gate Voltage—Reverse,TJ=125(20µs,120PPS)
Junction Temperature
Storage Temperature
0.5
2.0
10
-40~125
-40~150
W
A
V
Mass
2.0 g
Note1.Although not recommended off -state voltages up to 800v ,may be applied with out damage, but the TRIAC may
switch, to the on-state .the rate of rise of current should not exceed 3A/us.
Thermal Characteristics
Symbol
Parameter
RӨJC
Thermal Resistance Junction to case
RӨJA
Thermal resistance Junction to Ambient
Value
3.0
120
Units
℃/W
℃/W
Rev.A Oct.2011
Copyright@Winsemi Microelectronics Co., Ltd., All right reserved.





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