(PDF) WBW3320 Datasheet - NPN Power Transistor

Número de pieza	WBW3320
Descripción	NPN Power Transistor
Fabricantes	Winsemi
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No Preview Available ! WBW3320 High Voltage Fast-Switching NPN Power Transistor Features ◆ Very High Switching Speed ◆ High Voltage Capability ◆ Wide Reverse Bias SOA TO3P WBW3320 General Description This Device is designed for high voltage, High speed switching characteristics required such as lighting system, switching mode power supply. Absolute Maximum Ratings Symbol Parameter VCES VCEO VEBO IC ICP IB IBM PC TJ TST G Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector pulse Current Base Current Base Peak Current Total Dissipation at Tc = 25℃ Operation Junction Temperature Storage Temperature Test Conditions VBE = 0 IB = 0 IC = 0 tP = 5ms TO247 WBW3320W Value Units 500 400 9 15 30 7 14 120 150 -55 ~ 150 V V V A A A A W ℃ ℃ Thermal Characteristics Sym bol Parameter RθJc Thermal Resistance Junction to Case RθJA Thermal Resistance Junction to Ambient Value 1.05 62.5 Units ℃/W ℃/W Rev.A Jul.2011 Copyright@Winsemi Microelectronics Co., Ltd., All right r eserved. T0 2-1 1 page TO3PB Package Dimension WBW3320 Unit:mm Steady, keep you advance 5 /6 5 Page

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PDF WBW3320 Data sheet ( Hoja de datos )