(PDF) RN262G Datasheet

Número de pieza	RN262G
Descripción	PIN diode
Fabricantes	ROHM Semiconductor
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No Preview Available ! Diodes PIN diode RN262G RN262G zApplications High frequency switching zExternal dimensions (Unit : mm) 0.6±0.05 0.13±0.03 zLand size figure (Unit : mm) 0.5 zFeatures 1) Ultra small mold type. (VMD2) 2) Low high-frequency forward resistance / low capacitance (CT). zConstruction Silicon epitaxial planar 0.27±0.03 0.5±0.05 ROHM : VMD2 dot (year week factory) zTaping dimensions (Unit : mm) 4±0.1 2±0.05 φ1.5+0.1 　　　　　0 VMD2 zStructure 0.18±0.05 0.76±0.1 zAbsolute maximum ratings (Ta=25°C) Parameter Reverse voltage Forward current Power dissipation Junction temperature Storage temperature Symbol VR IF Pd Tj Tstg 4±0.1 Limits 30 100 100 150 -55 to +150 2±0.05 φ0.5 Unit V mA mA ℃ ℃ 0.3 0.65±0.05 zElectrical characteristics (Ta=25°C) Parameter Symbol Min. Typ. Max. Forward voltage Reverse current VF - - 1 IR - - 0.1 Capacitance between terminals Ct - - 0.4 High frequency resistance Rf - - 2.8 - - 1.5 Unit Conditions V IF=10mA µA VR=30V pF VR=1V , f=1MHz Ω IF=3mA,f=100MHz Ω IF=10mA,f=100MHz 1/2 1 page

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PDF RN262G Data sheet ( Hoja de datos )