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Número de pieza | RB168VAM-30 | |
Descripción | Schottky Barrier Diode | |
Fabricantes | ROHM Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de RB168VAM-30 (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
No Preview Available ! Schottky Barrier Diode
RB168VAM-30
Data Sheet
lApplication
General rectification
lFeatures
1) Small mold type
(TUMD2M)
2) High reliability
3) Super low IR
lDimensions (Unit : mm)
1.4±0.1
0.8±0.05
0.17
+0.10
-0.05
1.0±0.10
0.60
+0.20
-0.10
lLand Size Figure (Unit : mm)
1.1
(1)
(2)
ROHM : TUMD2M
Manufacture date and factory
0~0.1
TUMD2M
lStructure (1)Cathode
lConstruction
lTaping Dimensions (Unit : mm)
Silicon epitaxial planar type
4.0±0.1
2.0±0.05
4.0±0.1
Φ1.5
+0.1
-0
(2) Anode
0.25±0.05
1.53±0.03
Φ1.0+-00.2
0.9±0.08
lAbsolute Maximum Ratings (Tc= 25°C)
Parameter
Symbol
Conditions
Limits Unit
Repetitive Peak Reverse Voltage
VRM
Duty≦0.5
30 V
Reverse Voltage
VR Direct Reverse Voltage
Average Forward Rectified Current
Non-repetitive Forward Current Surge Peak
Io
IFSM
Glass epoxy board mounted, 60Hz half sin Wave,
resistive load, Tc=100°C Max.
60Hz half sin wave,
Non-repetitive at Ta=25°C, 1cycle
Operating Junction Temperature
Tj
-
30
1
5
150
V
A
A
°C
Storage Temperature
Tstg
- -55 to +150 °C
lElectrical Characteristics (Tj = 25°C)
Parameter
Symbol
Forward Voltage
VF
Reverse Current
IR
Conditions
IF=1A
VR=30V
Min. Typ. Max. Unit
- - 0.73 V
- - 0.3 mA
www.rohm.com
© 2016 ROHM Co., Ltd. All rights reserved.
1/5
2016.01 - Rev.A
1 page RB168VAM-30
lElectrical Characteristic Curves
Data Sheet
1000
Rth(j-a)
100
Rth(j-c)
Glass epoxy board mounted
10
IM=10mA
IF=1A
time
1
0.001 0.01 0.1
1ms300ms
1 10
100 1000
TIME : t (s)
Rth-t CHARACTERISTICS
3
Glass epoxy board mounted
2.5
IO
0A
0V
2
VR t
T
D=t/T
DC
1.5
VR=VRM/2
Tj=150°C
D = 1/2
1
0.5 Sin(θ=180)
0
0 25 50 75 100 125 150
AMBIENT TEMPERATURE : Ta (°C)
DERATING CURVE (Io-Ta)
3
2.5
2 DC
Glass epoxy board mounted
IO
0A
0V
VR t
T
D=t/T
VR=VRM/2
Tj=150°C
1.5
D = 1/2
1
0.5 Sin(θ=180)
0
0 25 50 75 100 125
CASE TEMPERATURE : Tc (°C)
DERATING CURVE (Io-Tc)
150
www.rohm.com
© 2016 ROHM Co., Ltd. All rights reserved.
5/5
2016.01 - Rev.A
5 Page |
Páginas | Total 9 Páginas | |
PDF Descargar | [ Datasheet RB168VAM-30.PDF ] |
Número de pieza | Descripción | Fabricantes |
RB168VAM-30 | Schottky Barrier Diode | ROHM Semiconductor |
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