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Teilenummer | RB068L-60 |
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Beschreibung | Schottky Barrier Diode | |
Hersteller | ROHM Semiconductor | |
Logo | ||
Gesamt 5 Seiten RB068L-60
Data Sheet
Schottky Barrier Diode
RB068L-60
lApplications
General rectification
lExternal Dimensions(Unit : mm)
2.6±0.2
lFeatures
1)Small power mold type.(PMDS)
2)High reliability
3)AEC-Q101 qualified
lConstruction
Silicon epitaxial
95
12
1.5±0.2
0.1±0.02
0.1
2.0±0.2
ROHM : PMDS
JEDEC : SOD-106
1 2 Manufacture Date
lLand Size Figure(Unit : mm)
2.0
PMDS
lStructure
lTaping Dimensions(Unit : mm)
2.0±0.05
4.0±0.1
φ 1.55±0.05
0.3
2.9±0.1
4.0±0.1
lAbsolute Maximum Ratings(Ta=25°C)
Parameter
Symbol
Reverse voltage (repetitive)
Reverse voltage (DC)
VRM
VR
Average rectified forward current (*1)
Io
Forward current surge peak (60Hz・1cyc)
IFSM
Junction temperature
Tj
Storage temperature
Tstg
(*1)Mounting on epoxi board. 180°Half sine wave
lElectrical Characteristics(Ta=25°C)
Parameter
Forward voltage
Reverse current
Symbol
VF
IR
Limits
60
60
2
40
150
-55 to +150
Min. Typ. Max.
- - 0.70
- - 2.0
φ 1.55
Unit
V
V
A
A
°C
°C
2.8MAX
Unit Conditions
V IF=2.0A
mA VR=60V
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© 2012 ROHM Co., Ltd. All rights reserved.
1/4
2012.08 - Rev.A
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Seiten | Gesamt 5 Seiten | |
PDF Download | [ RB068L-60 Schematic.PDF ] |
Teilenummer | Beschreibung | Hersteller |
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