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EL5211T Schematic ( PDF Datasheet ) - Intersil

Teilenummer EL5211T
Beschreibung 60MHz Rail-to-Rail Input-Output Operational Amplifier
Hersteller Intersil
Logo Intersil Logo 




Gesamt 15 Seiten
EL5211T Datasheet, Funktion
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60MHz Rail-to-Rail Input-Output Operational Amplifier
EL5211T
The EL5211T is a high voltage rail-to-rail input-output
amplifier with low power consumption. The EL5211T
contains two amplifiers. Each amplifier exhibits beyond
the rail input capability, rail-to-rail output capability and
is unity gain stable.
The maximum operating voltage range is from 4.5V to
19V. It can be configured for single or dual supply
operation, and typically consumes only 3mA per
amplifier. The EL5211T has an output short circuit
capability of ±300mA and a continuous output current
capability of ±65mA.
The EL5211T features a high slew rate of 100V/µs, and
fast settling time. Also, the device provides common
mode input capability beyond the supply rails, rail-to-rail
output capability, and a bandwidth of 60MHz (-3dB). This
enables the amplifiers to offer maximum dynamic range
at any supply voltage. These features make the EL5211T
an ideal amplifier solution for use in TFT-LCD panels as a
VCOM driver or static gamma buffer, and in high speed
filtering and signal conditioning applications. Other
applications include battery power and portable devices,
especially where low power consumption is important.
The EL5211T is available in a thermally enhanced 8 Ld
HMSOP package, and a thermally enhanced 8 Ld DFN
package. Both feature a standard operational amplifier
pinout. The device operates over an ambient
temperature range of -40°C to +85°C.
Features
• 60MHz (-3dB) Bandwidth
• 4.5V to 19V Maximum Supply Voltage Range
• 100V/µs Slew Rate
• 3mA Supply Current (per Amplifier)
• ±65mA Continuous Output Current
• ±300mA Output Short Circuit Current
• Unity-gain Stable
• Beyond the Rails Input Capability
• Rail-to-rail Output Swing
• Built-in Thermal Protection
• -40°C to +85°C Ambient Temperature Range
• Pb-Free (RoHS Compliant)
Applications*(see page 13)
• TFT-LCD Panels
• VCOM Amplifiers
• Static Gamma Buffers
• Drivers for A/D Converters
• Data Acquisition
• Video Processing
• Audio Processing
• Active Filters
• Test Equipment
• Battery-powered Applications
• Portable Equipment
+15V
VOUTA
VINA-
0
VINA+
VS-
EL5211T
VS+
0.1µF
VOUTB
+15V
+
4.7µF
PANEL
CAPACITANCE
VINB-
0
VINB+
PANEL
CAPACITANCE
TFT-LCD
PANEL
FIGURE 1. TYPICAL TFT-LCD VCOM APPLICATION
10
8
VS = ±5V
AV = 1
6 CL = 1.5pF
RL || 1kΩ (PROBE)
4
2 1kΩ
0
-2
-4 560Ω
-6 150Ω
-8
-10
100k
1M 10M
FREQUENCY (Hz)
100M
FIGURE 2. FREQUENCY RESPONSE FOR VARIOUS RL
May 12, 2010
FN6893.0
1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 1-888-468-3774 | Intersil (and design) is a registered trademark of Intersil Americas Inc.
Copyright Intersil Americas Inc. 2010. All Rights Reserved
All other trademarks mentioned are the property of their respective owners.






EL5211T Datasheet, Funktion
EL5211T
Typical Performance Curves
450
400
350
VS = ±5V
TA = +25°C
TYPICAL
PRODUCTION
DISTRIBUTION
300
250
200
150
100
50
0
-12 -10 -8 -6 -4 -2 0 2 4 6 8 10 12
INPUT OFFSET VOLTAGE (mV)
FIGURE 3. INPUT OFFSET VOLTAGE DISTRIBUTION
10
9
VS = ±5V
-40°C to +85°C
8
TYPICAL
7 PRODUCTION
6 DISTRIBUTION
5
4
3
2
1
0
2
6 10 14 18 22 26 30 34 38
INPUT OFFSET VOLTAGE DRIFT (|µV|/°C)
FIGURE 4. INPUT OFFSET VOLTAGE DRIFT (HMSOP)
12
VS = ±5V
-40°C to +85°C
10
TYPICAL
8
PRODUCTION
DISTRIBUTION
6
4
2
0
2 6 10 14 18 22 26 30 34 38
INPUT OFFSET VOLTAGE DRIFT (|µV|/°C)
FIGURE 5. INPUT OFFSET VOLTAGE DRIFT (DFN)
10
VS = ±5V
5
0
-5
-10
-50
0 50 100
TEMPERATURE (°C)
150
FIGURE 6. INPUT OFFSET VOLTAGE vs TEMPERATURE
4
VS = ±5V
3
2
1
0
-50
0 50 100
TEMPERATURE (°C)
150
FIGURE 7. INPUT BIAS CURRENT vs TEMPERATURE
4.95
4.94
VS = ±5V
IOUT = +5mA
4.93
4.92
-50
0 50 100
TEMPERATURE (°C)
150
FIGURE 8. OUTPUT HIGH VOLTAGE vs TEMPERATURE
6 FN6893.0
May 12, 2010

6 Page









EL5211T pdf, datenblatt
EL5211T
Driving Capacitive Loads
As load capacitance increases, the -3dB bandwidth will
decrease and peaking can occur. Depending on the
application, it may be necessary to reduce peaking and
to improve device stability. To improve device stability a
snubber circuit or a series resistor may be added to the
output of the EL5211T.
A snubber is a shunt load consisting of a resistor in series
with a capacitor. An optimized snubber can improve the
phase margin and the stability of the EL5211T. The
advantage of a snubber circuit is that it does not draw
any DC load current or reduce the gain.
Another method to reduce peaking is to add a series
output resistor (typically between 1to 10). Depending
on the capacitive loading, a small value resistor may be
the most appropriate choice to minimize any reduction in
gain.
Power Dissipation
With the high-output drive capability of the EL5211T
amplifiers, it is possible to exceed the +150°C absolute
maximum junction temperature under certain load
current conditions. It is important to calculate the
maximum power dissipation of the EL5211T in the
application. Proper load conditions will ensure that the
EL5211T junction temperature stays within a safe
operating region.
The maximum power dissipation allowed in a package is
determined according to Equation 1:
PDMAX
=
T----J---M-----A----X-----–-----T----A---M-----A----X--
JA
(EQ. 1)
where:
• TJMAX = Maximum junction temperature
• TAMAX = Maximum ambient temperature
JA = Thermal resistance of the package
• PDMAX = Maximum power dissipation allowed
The total power dissipation produced by an IC is the total
quiescent supply current times the total power supply
voltage, plus the power dissipation in the IC due to the
loads, or:
PDMAX = iVS ISMAX + VS+ VOUTi   ILOADi
(EQ. 2)
when sourcing, and:
PDMAX = iVS ISMAX + VOUTi VS-   ILOADi
(EQ. 3)
when sinking,
where:
• i = 1 to 2
(1, 2 corresponds to Channel A, B respectively)
• VS = Total supply voltage (VS+ - VS-)
• VS+ = Positive supply voltage
• VS- = Negative supply voltage
• ISMAX = Maximum supply current per amplifier
(ISMAX = EL5211T quiescent current ÷ 2)
• VOUT = Output voltage
• ILOAD = Load current
Device overheating can be avoided by calculating the
minimum resistive load condition, RLOAD, resulting in
the highest power dissipation. To find RLOAD set the two
PDMAX equations equal to each other and solve for
VOUT/ILOAD. Reference the package power dissipation
curves, Figures 34 and 35, for further information.
JEDEC JESD51-3 LOW EFFECTIVE THERMAL
CONDUCTIVITY TEST BOARD
1.0
781mW
0.8
0.6 694mW
DFN8
JA = +160°C/W
0.4 HMSOP8
JA = +180°C/W
0.2
0.0
0
25
50
75 85 100
125
AMBIENT TEMPERATURE (°C)
FIGURE 34. PACKAGE POWER DISSIPATION vs
AMBIENT TEMPERATURE
150
JEDEC JESD51-7 HIGH EFFECTIVE THERMAL
CONDUCTIVITY (4-LAYER) TEST BOARD - EXPOSED
DIEPAD SOLDERED TO PCB PER JESD51-5
2.8
2.4 2.16W
2.0
2.02W
1.6
DFN8
JA = +58°C/W
1.2 HMSOP8
JA = +62°C/W
0.8
0.4
0.0
0
25
50
75 85 100
125
150
AMBIENT TEMPERATURE (°C)
FIGURE 35. PACKAGE POWER DISSIPATION vs
AMBIENT TEMPERATURE
Power Supply Bypassing and Printed Circuit
Board Layout
The EL5211T can provide gain at high frequency, so good
printed circuit board layout is necessary for optimum
performance. Ground plane construction is highly
recommended, trace lengths should be as short as
12 FN6893.0
May 12, 2010

12 Page





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