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Teilenummer | WFD7N65S |
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Beschreibung | Power MOSFET ( Transistor ) | |
Hersteller | Winsemi | |
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Gesamt 6 Seiten WFD7N65S
650V Super-Junction Power MOSFET
Features
� Ultra low Rdson
� Ultra low gate charge (typ. Qg =19nC)
� 100% UIS tested
� RoHS compl iant
General Description
Power MOSFET is fabricated using advanced super junction
technology. The resulting device has extremely low on resistance,
making it especially suitable for applications which require superior
power density and outstanding efficiency.
D
G
S
Absolute Maximum Ratings
Symbol
Parameter
VDSS
ID
Drain Source Voltage
Continuous Drain Current (Tc=25℃)
(Tc=100℃)
IDM Drain Current Pulsed 1)
VGS Gate to Source Voltage
EAS Single Pulse Avalanche Energy 2)
IAR Single Pulse Avalanche Current 1)
EAR Repetitive Avalanche Energy 1)
Total Power Dissipation(@Tc=25℃)
PD -Derate above 25℃
TJ Junction Temperature
Tstg Storage Temperature
Is Continuous diode forward current
Is,pulse Diode pulse current
Notes:
1.Repetitive Rating:Pulse width limited by maximum Junction Temperature
2.IAS=2.5,VDD=60V,R G=25Ω ,Starting TJ=25℃
Value
650
7
4.4
21
±30
230
7
0.5
83
0.67
150
-55~150
7
21
Units
V
A
A
V
mJ
A
mJ
W
W/℃
℃
℃
A
A
Thermal Characteristics
Symbol
Parameter
R θJC
RθJA
Thermal Resistance , Junction -to -Case
Thermal Resistance , Junction -to -Ambient
Value
Units
Min Typ Max
- - 1.5 ℃/W
- - 62 ℃/W
WT-F044-Rev.A1 Nov.2013
Copyr ight@Winsemi Microelectronics Co., Ltd., All right reserved.
DPAK Package Dimension
WFD7N65S
U nit:m m
E
AF
符号
sym bol
M IN
M AX
E1
A 2.19 2.38
A 1 - 0.13
b 0 . 6 4 0. 89
H c 0.46 0.61
A1
L 2 D 5.97 6.22
D 1 0.89 1.27
b E 6.35 6.73
ec
E 1 5.21 5.46
e 2.28TYP
F 0.46 0.61
θ
L
H 9.65 10.41
L 1.40 1.78
L 2 0.64 1.01
θ 0。 8。
Steady, keep you advance
6/ 6
6 Page | ||
Seiten | Gesamt 6 Seiten | |
PDF Download | [ WFD7N65S Schematic.PDF ] |
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