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PDF WFU20N06 Data sheet ( Hoja de datos )
| Número de pieza | WFU20N06 | |
| Descripción | Silicon N-Channel MOSFET | |
| Fabricantes | Winsemi | |
| Logotipo |  |
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WFU20N06
Silicon N-Channel MOSFET
Features
■ 20A,60V, RDS(on)(Max 39mΩ)@VGS=10V
■ Ultra-low Gate Charge(Typical 6.1nC)
■ High Current Capability
■ 100%Avalanche Tested
■ Maximum Junction Temperature Range(150℃)
General Description
This Power MO S FE T is produced using W in se m i ’s advanced
planar stripe, This latest technology has been especially designed to
minimize on-state resistance, have a high rugged avalanche
characteristics. This devices is specially well suited for high
efficiency switch mode power supply. electronic Lamp ballasts
based on half bridge and UPS.
Absolute Maximum Ratings
Symbol
Parameter
V DSS
Drain Source Voltage
ID Continuous Drain Current(@Tc=25℃)
Continuous Drain Current(@Tc=100℃)
IDM Drain Current Pulsed tp=10us
VGS Gate to Source Voltage-Continuous
VGS Gate to Source Voltage-Non-Repetitive(tp<10us)
EAS Single Pulsed Avalanche Energy
Is Source Current (Body Diode)
PD
TJ, Tstg
TL
Total Power Dissipation(@Tc=25℃)
Junction and Storage Temperature
Channel Temperature(1/8” from case for 10s)
(Note 2)
Value
60
20
13
76
±20
±30
18
20
36
-55~150
260
Units
V
A
A
A
V
V
mJ
A
W
℃
℃
Thermal Characteristics
Symbol
Parameter
R QJC
R QJA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Min
-
-
Value
Typ
3.5
45
Max
-
-
Units
℃/W
℃/W
Copyright@Winsemi Microelectronics Co., Ltd., All right reserved.
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WFU20N06
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| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet WFU20N06.PDF ] | |
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