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Teilenummer | WFP5N80 |
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Beschreibung | Silicon N-Channel MOSFET | |
Hersteller | Winsemi | |
Logo | ||
Gesamt 7 Seiten Features
� 4.5A,800V,RDS(on)(Max2.5Ω)@VGS=10V
� Ultra-low Gate charge(Typical 14nC)
� Fast Switching Capability
� 100%Avalanche Tested
� Maximum Junction Temperature Range(150℃)
WFP5N80
Silicon N-Channel MOSFET
General Description
This Power MOSFET is produced using Winsemi's advanced
planar stripe,VDMOS technology.this latest technology has been
especially designed to minimize on-state resistance, have a high
rugged avalanche characteristics .This devices is specially well
suited for half bridge and full bridge resonant topology line a
electronic lamp ballast, high efficiency switched mode power
supplies, active power factor correction.
Absolute Maximum Ratings
Symbol
Parameter
VDSS
ID
Drain Source Voltage
Continuous Drain Current(@Tc=25℃)
Continuous Drain Current(@Tc=100℃)
IDM Drain Current Pulsed
VGS Gate to Source Voltage
EAS Single Pulsed Avalanche Energy
IAR Avalanche Current
EAR Repetitive Avalanche Energy
dv/dt
Peak Diode Recovery dv /dt
Total Power Dissipation(@Tc=25℃)
PD
Derating Factor above 25℃
TJ Junction Temperature
Tstg Storage Temperature
TL Channel Temperature
(Note1)
(Note2)
(Note1)
(Note1)
(Note3)
Value
800
4.5
2.5
16
±30
230
4
11
4.5
100
1.28
150
-55~150
300
Units
V
A
A
A
V
mJ
mJ
V/ns
W
W/℃
℃
℃
Thermal Characteristics
Symbol
Parameter
RQJC
RQJA
Thermal Resistance , Junction -to -Case
Thermal Resistance , Junction-to -Ambient
Value
Units
Min Typ Max
- - 1.25 ℃/W
- - 62.5 ℃/W
Rev.A May.2012
Copyright@Winsemi Microelectronics Co., Ltd., All right reserved.
WFP5N80
Fig.15 Peak Diode Recovery dv/dt Test Circuit & Waveform
Steady, keep you advance
6/7
6 Page | ||
Seiten | Gesamt 7 Seiten | |
PDF Download | [ WFP5N80 Schematic.PDF ] |
Teilenummer | Beschreibung | Hersteller |
WFP5N80 | Silicon N-Channel MOSFET | Winsemi |
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