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WFP5N80 Schematic ( PDF Datasheet ) - Winsemi

Teilenummer WFP5N80
Beschreibung Silicon N-Channel MOSFET
Hersteller Winsemi
Logo Winsemi Logo 




Gesamt 7 Seiten
WFP5N80 Datasheet, Funktion
Features
4.5A,800V,RDS(on)(Max2.5Ω)@VGS=10V
Ultra-low Gate charge(Typical 14nC)
Fast Switching Capability
100%Avalanche Tested
Maximum Junction Temperature Range(150℃)
WFP5N80
Silicon N-Channel MOSFET
General Description
This Power MOSFET is produced using Winsemi's advanced
planar stripe,VDMOS technology.this latest technology has been
especially designed to minimize on-state resistance, have a high
rugged avalanche characteristics .This devices is specially well
suited for half bridge and full bridge resonant topology line a
electronic lamp ballast, high efficiency switched mode power
supplies, active power factor correction.
Absolute Maximum Ratings
Symbol
Parameter
VDSS
ID
Drain Source Voltage
Continuous Drain Current(@Tc=25)
Continuous Drain Current(@Tc=100)
IDM Drain Current Pulsed
VGS Gate to Source Voltage
EAS Single Pulsed Avalanche Energy
IAR Avalanche Current
EAR Repetitive Avalanche Energy
dv/dt
Peak Diode Recovery dv /dt
Total Power Dissipation(@Tc=25)
PD
Derating Factor above 25
TJ Junction Temperature
Tstg Storage Temperature
TL Channel Temperature
(Note1)
(Note2)
(Note1)
(Note1)
(Note3)
Value
800
4.5
2.5
16
±30
230
4
11
4.5
100
1.28
150
-55~150
300
Units
V
A
A
A
V
mJ
mJ
V/ns
W
W/
Thermal Characteristics
Symbol
Parameter
RQJC
RQJA
Thermal Resistance , Junction -to -Case
Thermal Resistance , Junction-to -Ambient
Value
Units
Min Typ Max
- - 1.25 /W
- - 62.5 /W
Rev.A May.2012
Copyright@Winsemi Microelectronics Co., Ltd., All right reserved.






WFP5N80 Datasheet, Funktion
WFP5N80
Fig.15 Peak Diode Recovery dv/dt Test Circuit & Waveform
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