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WFP13N50C Schematic ( PDF Datasheet ) - Winsemi

Teilenummer WFP13N50C
Beschreibung Silicon N-Channel MOSFET
Hersteller Winsemi
Logo Winsemi Logo 




Gesamt 8 Seiten
WFP13N50C Datasheet, Funktion
WFP13N50C Product Description
Silicon N-Channel MOSFET
Features
13A,500V, RDS(on)(Max0.49Ω)@VGS=10V
Ultra-low Gate charge(Typical 37nC)
Fast Switching Capability
100%Avalanche Tested
Maximum Junction Temperature Range(150℃)
General Description
This Power MOSFET is produced using Winsemi’s trench layout-based
process.This technology improves the performances compared with
standard parts from various sources. All of these power MOSFETs are
designed for applications in switching regulators, switching convertors,
motor and relay drivers, and drivers for high power bipolar switching
transistors demanding high speed and low gate drive power.
D
G
S
Absolute Maximum Ratings
Symbol
Parameter
VDSS
ID
Drain Source Voltage
Continuous Drain Current(@Tc=25)
Continuous Drain Current(@Tc=100)
IDM Drain Current Pulsed
VGS Gate to Source Voltage
EAS Single Pulsed Avalanche Energy
IAR Avalanche Current
EAR Repetitive Avalanche Energy
dv/dt
Peak Diode Recovery dv /dt
Total Power Dissipation(@Tc=25)
PD
Derating Factor above 25
TJ,Tstg
Junction and Storage Temperature
TL Channel Temperature
Thermal Characteristics
Symbol
Parameter
RQJC
RQJA
Thermal Resistance , Junction -to -Case
Thermal Resistance , Junction-to -Ambient
(Note1)
(Note2)
note 1
(Note1)
(Note3)
Value
500
13
8
52
±30
845
13
5
4.5
190
1.56
-55~150
300
Units
V
A
A
A
V
mJ
A
mJ
V/ ns
W
W/
Value
Min Typ Max
- - 0.66
- - 62.5
Units
/W
/W
WINSEM I M ICROELECTRONICS
WINSEM I M ICROELECTRONICS
WINSEM I M ICROELECTRONICS
Copyright@Winsemi Microelectronics Co., Ltd., All right reserved.
WINSEM I M ICROELECTRONICS
WT-017-Rev.A0 Apr.2013
WINSEM I M ICROELECTRONICS






WFP13N50C Datasheet, Funktion
WFP13N50C Product Description
Silicon N-Channel MOSFET
DUT
VD S
IS D
Driver
RG
VG S
L
Same Type
as DUT
dv/dt controlled by RG
IS D conteolled by pulse period
VD D
VG S
(Driver)
IS D
(DUT)
VD S
(DUT)
Gate Pulse Width
D=
Gate Pulse Period
10V
IF M ,Body Diode Forward Current
di/dt
IR M
Body Diode Reverse Current
Body Diode Recovery dv/dt
VS D
VD D
Body Diode
Forward Voltage Drop
Fig.15 Peak Diode Recovery dv/dt Test Circuit & Waveform
WIN SEM I M ICROELECTRON ICS
WIN SEM I M ICROELECTRON ICS
WIN SEM I M ICROELECTRON ICS
www.winsemi.com Tel : +86-755-8250 6288 Fax : +86-755-8250 6299
WIN SEM I M ICROELECTRON ICS
WIN SEM I M ICROELECTRON ICS
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