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WFP13N50 Schematic ( PDF Datasheet ) - Winsemi

Teilenummer WFP13N50
Beschreibung Silicon N-Channel MOSFET
Hersteller Winsemi
Logo Winsemi Logo 




Gesamt 7 Seiten
WFP13N50 Datasheet, Funktion
Features
13A,500V, RDS(on)(Max0.46Ω)@VGS=10V
Ultra-low Gate charge(Typical 43nC)
Fast Switching Capability
100%Avalanche Tested
Maximum Junction Temperature Range(150℃)
WFP13N50
Silicon N-Channel MOSFET
General Description
This Power MOSFET is produced using Winsemi’s trench
layout-based process.This technology improves the performances
compared with standard parts from various sources. All of these
power MOSFETs are designed for applications in switching
regulators, switching convertors, motor and relay drivers, and drivers
for high power bipolar switching transistors demanding high speed
and low gate drive power.
Absolute Maximum Ratings
Symbol
Parameter
VDSS
ID
Drain Source Voltage
Continuous Drain Current(@Tc=25)
Continuous Drain Current(@Tc=100)
IDM Drain Current Pulsed
VGS Gate to Source Voltage
EAS Single Pulsed Avalanche Energy
EAR Repetitive Avalanche Energy
dv/dt
Peak Diode Recovery dv /dt
Total Power Dissipation(@Tc=25)
PD
Derating Factor above 25
TJ,Tstg
Junction and Storage Temperature
TL Channel Temperature
(Note1)
(Note2)
(Note1)
(Note3)
Value
500
13
8
52
±30
845
5
3.5
195
1.56
-55~150
300
Units
V
A
A
A
V
mJ
mJ
V/ ns
W
W/
Thermal Characteristics
Symbol
Parameter
RQJC
RQCS
RQJA
Thermal Resistance , Junction -to -Case
Thermal Resistance , Case-to-Sink
Thermal Resistance , Junction-to -Ambient
Value
Min Typ Max
- - 0.64
- 0.5 -
- - 62.5
Units
/W
/W
/W
Rev.A Nov.2010
Copyright@Winsemi Microelectronics Co., Ltd., All right reserved.






WFP13N50 Datasheet, Funktion
WFP13N50
Fig.13 Peak Diode Recovery dv/dt Test Circuit & Waveform
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