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WFP8N60B Schematic ( PDF Datasheet ) - Winsemi

Teilenummer WFP8N60B
Beschreibung Silicon N-Channel MOSFET
Hersteller Winsemi
Logo Winsemi Logo 




Gesamt 8 Seiten
WFP8N60B Datasheet, Funktion
WFP8N60B Product Description
Silicon N-Channel MOSFET
Features
7.5A,600V,RDS(on)(Max1.2Ω)@VGS=10V
Ultra-low Gate charge(Typical 25nC)
Fast Switching Capability
100%Avalanche Tested
Isolation Voltage (VISO=4000V AC)
Maximum Junction Temperature Range(150℃)
General Description
This Power MOSFET is produced using Winsemi's advancedplanar
stripe,VDMOS technology.this latest technology has beenespecially
designed to minimize on-state resistance, have a high rugged
avalanche characteristics .This devices is specially wellsuited for
half bridge and full bridge resonant topology line a electronic lamp
ballast, high efficiency switched mode power supplies, active power
factor correction.
D
G
S
Absolute Maximum Ratings
Symbol
Parameter
VDSS
ID
Drain Source Voltage
Continuous Drain Current(@Tc=25)
Continuous Drain Current(@Tc=100)
IDM Drain Current Pulsed
VGS Gate to Source Voltage
EAS Single Pulsed Avalanche Energy
IAR Avalanche Current
EAR Repetitive Avalanche Energy
dv/dt
Peak Diode Recovery dv /dt
Total Power Dissipation(@Tc=25)
PD
Derating Factor above 25
TJ,Tstg
Junction and Storage Temperature
TL Channel Temperature
(Note1)
(Note2)
(Note1)
(Note1)
(Note3)
Value
600
7.5
4.3
30
±30
590
7
14
4.5
142
1.14
-55~150
300
Units
V
A
A
A
V
mJ
mJ
mJ
V/ ns
W
W/
Thermal Characteristics
Symbol
Parameter
RQJC
RQJA
Thermal Resistance , Junction -to -Case
Thermal Resistance , Junction-to -Ambient
Value
Units
Min Typ Max
- - 0.88 /W
- - 62.5 /W
WIN SEM I M ICROELECTRON ICS
WIN SEM I M ICROELECTRON ICS
WIN SEM I M ICROELECTRON ICS
Copyright@Winsemi Microelectronics Co., Ltd., All right reserved.
WIN SEM I M ICROELECTRON ICS
WT-F052-Rev.A0 Oct.2013
WIN SEM I M ICROELECTRON ICS
1008






WFP8N60B Datasheet, Funktion
WFP8N60B Product Description
Silicon N-Channel MOSFET
DUT
VD S
IS D
Driver
RG
VG S
L
Same Type
as DUT
dv/dt controlled by RG
IS D conteolled by pulse period
VD D
VG S
(Driver)
IS D
(DUT)
VD S
(DUT)
Gate Pulse Width
D=
Gate Pulse Period
10V
IF M ,Body Diode Forward Current
di/dt
IR M
Body Diode Reverse Current
Body Diode Recovery dv/dt
VS D
VD D
Body Diode
Forward Voltage Drop
Fig.15 Peak Diode Recovery dv/dt Test Circuit & Waveform
WIN SEM I M ICROELECTRON ICS
WIN SEM I M ICROELECTRON ICS
WIN SEM I M ICROELECTRON ICS
www.winsemi.com Tel : +86-755-8250 6288 Fax : +86-755-8250 6299
WIN SEM I M ICROELECTRON ICS
WIN SEM I M ICROELECTRON ICS
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