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WFF5N65B Schematic ( PDF Datasheet ) - Winsemi

Teilenummer WFF5N65B
Beschreibung Silicon N-Channel MOSFET
Hersteller Winsemi
Logo Winsemi Logo 




Gesamt 7 Seiten
WFF5N65B Datasheet, Funktion
Features
4.5A,650V,RDS(on)(Max2.5Ω)@VGS=10V
Ultra-low Gate charge(Typical13.3nC)
Fast Switching Capability
100%Avalanche Tested
Maximum Junction Temperature Range(150℃)
WFF5N65B
Silicon N-Channel MOSFET
General Description
This Power MOSFET is produced using Winsemi's advanced
planar stripe,VDMOS technology.this latest technology has been
especially designed to minimize on-state resistance, have a high
rugged avalanche characteristics .This devices is specially well
suited for half bridge and full bridge resonant topology line a
electronic lamp ballast, high efficiency switched mode power
supplies, active power factor correction.
Absolute Maximum Ratings
Symbol
Parameter
VDSS
ID
Drain Source Voltage
Continuous Drain Current(@Tc=25)
Continuous Drain Current(@Tc=100)
IDM Drain Current Pulsed
VGS Gate to Source Voltage
EAS Single Pulsed Avalanche Energy
EAR Repetitive Avalanche Energy
dv/dt
Peak Diode Recovery dv /dt
Total Power Dissipation(@Tc=25)
PD
Derating Factor above 25
TJ Junction Temperature
Tstg Storage Temperature
TL Channel Temperature
*Drain current limited by junction temperature
(Note1)
(Note2)
(Note1)
(Note3)
Value
650
4.5*
3.1*
16*
±30
240
10
5.5
33
0.26
150
-55~150
300
Units
V
A
A
A
V
mJ
mJ
V/ns
W
W/
Thermal Characteristics
Symbol
Parameter
RQJC
RQJA
Thermal Resistance , Junction -to -Case
Thermal Resistance , Junction-to -Ambient
Value
Units
Min Typ Max
- - 3.79 /W
- - 62.5 /W
Rev.A Sep.2011
Copyright@Winsemi Microelectronics Co., Ltd., All right reserved.






WFF5N65B Datasheet, Funktion
WFF5N65B
Fig.15 Peak Diode Recovery dv/dt Test Circuit & Waveform
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