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WFF4N65L Schematic ( PDF Datasheet ) - Winsemi

Teilenummer WFF4N65L
Beschreibung Silicon N-Channel MOSFET
Hersteller Winsemi
Logo Winsemi Logo 




Gesamt 8 Seiten
WFF4N65L Datasheet, Funktion
WFF4N65L Product Description
Silicon N-Channel MOSFET
Features
4.0A,650V,RDS(on)(Max2.5Ω)@VGS=10V
Low Crss (typical 3.62pF )
Fast switching
100% avalanche tested
Improved dv/dt capability
Maximum Junction Temperature Range(150℃)
General Description
This Power MOSFET is produced using Winsemi's advanced
planar stripe,VDMOS technology.this latest technology has been
especially designed to minimize on-state resistance, have a high
rugged avalanche characteristics .This devices is specially well
suited for half bridge and full bridge resonant topology line a
electronic lamp ballast, high efficiency switched mode power
supplies, active power factor correction.
Absolute Maximum Ratings
Symbol
Parameter
VDSS
ID
Drain Source Voltage
Continuous Drain Current(@Tc=25)
Continuous Drain Current(@Tc=100)
IDM
VGS
EAS
EAR
dv/dt
PD
Drain Current Pulsed
Gate to Source Voltage
Single Pulsed Avalanche Energy
Repetitive Avalanche Energy
Peak Diode Recovery dv /dt
Total Power Dissipation(@Tc=25)
Derating Factor above 25
TJ Junction Temperature
Tstg Storage Temperature
Thermal Characteristics
Symbol
Parameter
RQJC
RQJA
Thermal Resistance , Junction -to -Case
Thermal Resistance , Junction-to -Ambient
D
G
S
(Note1)
(Note2)
(Note1)
(Note3)
Value
650
4
2.5
16
±30
256
11
5.5
33
0.26
150
-55~150
Units
V
A
A
A
V
mJ
mJ
V/ns
W
W/
Value
Units
Min Typ Max
- - 3.79 /W
- - 62.5 /W
WINSEMI MICROELECTRONICS
WINSEMI MICROELECTRONICS
WINSEMI MICROELECTRONICS
Copyright@Winsemi Microelectronics Co., Ltd., All right reserved.
WT-F119-Rev.A0 Dec.2015(B0
WINSEMI MICROELECTRONICS
WINSEMI MICROELECTRONICS
1215






WFF4N65L Datasheet, Funktion
WFF4N65L Product Description
Silicon N-Channel MOSFET
DUT
VD S
IS D
Driver
RG
VG S
L
Same Type
as DUT
dv/dt controlled by RG
IS D conteolled by pulse period
VD D
VG S
(Driver)
IS D
(DUT)
VD S
(DUT)
Gate Pulse Width
D=
Gate Pulse Period
10V
IF M ,Body Diode Forward Current
di/dt
IR M
Body Diode Reverse Current
Body Diode Recovery dv/dt
VS D
VD D
Body Diode
Forward Voltage Drop
Fig.15 Peak Diode Recovery dv/dt Test Circuit & Waveform
WINSEMI MICROELECTRONICS
WINSEMI MICROELECTRONICS
WINSEMI MICROELECTRONICS
www.winsemi.com Tel : +86-755-8250 6288 Fax : +86-755-8250 6299
WINSEMI MICROELECTRONICS
WINSEMI MICROELECTRONICS
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