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WFD5N60B Schematic ( PDF Datasheet ) - Winsemi

Teilenummer WFD5N60B
Beschreibung Silicon N-Channel MOSFET
Hersteller Winsemi
Logo Winsemi Logo 




Gesamt 8 Seiten
WFD5N60B Datasheet, Funktion
WFD5N60B Product Description
Silicon N-Channel MOSFET
Features
4.5A,600V,RDS(on)(Max2.4Ω)@VGS=10V
Ultra-low Gate charge(Typical 15nC)
Fast Switching Capability
100%Avalanche Tested
Maximum Junction Temperature Range(150℃)
General Description
This Power MOSFET is produced using Winsemi's advanced
planar stripe,VDMOS technology.this latest technology has been
especially designed to minimize on-state resistance, have a high
rugged avalanche characteristics .This devices is specially well
suited for half bridge and full bridge resonant topology line a
electronic lamp ballast, high efficiency switched mode power
supplies, active power factor correction.
Absolute Maximum Ratings
Symbol
Parameter
VDSS
ID
Drain Source Voltage
Continuous Drain Current(@Tc=25)
Continuous Drain Current(@Tc=100)
IDM Drain Current Pulsed
VGS Gate to Source Voltage
EAS Single Pulsed Avalanche Energy
EAR Repetitive Avalanche Energy
dv/dt
Peak Diode Recovery dv /dt
Total Power Dissipation(@Tc=25)
PD
Derating Factor above 25
TJ Junction Temperature
Tstg Storage Temperature
TL Channel Temperature
Thermal Characteristics
Symbol
Parameter
RQJC
RQJA
Thermal Resistance , Junction -to -Case
Thermal Resistance , Junction-to -Ambient
(Note1)
(Note2)
(Note1)
(Note3)
D
G
S
D
G
DPAK
S
Value
600
4.5
3.1
16
±30
240
10
4.5
50
0.39
150
-55~150
300
Units
V
A
A
A
V
mJ
mJ
V/ns
W
W/
Value
Units
Min Typ Max
- - 2.5 /W
- - 83 /W
WINSEM I M ICROELECTRONICS
WINSEM I M ICROELECTRONICS
WINSEM I M ICROELECTRONICS
Copyright@Winsemi Microelectronics Co., Ltd., All right reserved.
WINSEM I M ICROELECTRONICS
WT-F047-Rev.A1 May.2013
WINSEM I M ICROELECTRONICS
1111






WFD5N60B Datasheet, Funktion
WFD5N60B Product Description
Silicon N-ChannelMOSFET
DUT
VD S
IS D
Driver
RG
VG S
L
Same Type
as DUT
dv/dt controlled by RG
IS D conteolled by pulse period
VD D
VG S
(Driver)
IS D
(DUT)
VD S
(DUT)
Gate Pulse Width
D=
Gate Pulse Period
10V
IF M ,Body Diode Forward Current
di/dt
IR M
Body Diode Reverse Current
Body Diode Recovery dv/dt
VS D
VD D
Body Diode
Forward Voltage Drop
Fig.15 Peak Diode Recovery dv/dt Test Circuit & Waveform
WIN SEM I M ICROELECTRON ICS
WIN SEM I M ICROELECTRON ICS
WIN SEM I M ICROELECTRON ICS
www.winsemi.com Tel : +86-755-8250 6288 Fax : +86-755-8250 6299
WIN SEM I M ICROELECTRON ICS
WIN SEM I M ICROELECTRON ICS
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