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PDF DMP4025LSSQ Data sheet ( Hoja de datos )

Número de pieza DMP4025LSSQ
Descripción P-CHANNEL ENHANCEMENT MODE MOSFET
Fabricantes Diodes 
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Product Summary
BVDSS
-40V
RDS(ON) Max
25m@ VGS = -10V
45m@ VGS = -4.5V
ID Max (A)
TA = +25°C
-8.0A
-6.0A
DMP4025LSSQ
40V P-CHANNEL ENHANCEMENT MODE MOSFET
Features and Benefits
Low RDS(ON) Minimizes Conduction Losses
Fast Switching Speed Minimizes Switching Losses
Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP Capable (Note 4)
Description and Applications
This MOSFET is designed to meet the stringent requirements of
Automotive applications. It is qualified to AEC-Q101, supported by a
PPAP and is ideal for use in:
Motor Control
Backlighting
DC-DC Converters
Printer Equipment
Mechanical Data
Case: SO-8
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0 (Note 1)
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.074 grams (Approximate)
SO-8
Top View
Pin-Out Top View
Internal Schematic
Ordering Information (Note 5)
Notes:
Part Number
DMP4025LSSQ-13
Case
SO-8
Packaging
2,500/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen and Antimony free,"Green" and Lead-Free.
3. Halogen and Antimony free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Refer to http://www.diodes.com/product_compliance_definitions.html
5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
P4025LS
YY WW
= Manufacturer’s Marking
P4025LS = Product Type Marking Code
YYWW = Date Code Marking
YY = Year (ex: 16 = 2016)
WW = Week (01 - 53)
DMP4025LSSQ
Document Number: DS38881 Rev: 1 - 2
1 of 7
www.diodes.com
May 2016
© Diodes Incorporated

1 page




DMP4025LSSQ pdf
2.0
1.5
1.0 ID = -1mA
ID = -250µA
0.5
0
-50 -25 0 25 50 75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Fig. 9 Gate Threshold Variation vs. Ambient Temperature
10,000
1,000
100
Ciss
Coss
Crss
10
0
10
5 10 15 20 25
-VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 11 Typical Total Capacitance
30
8
VDS = -20V
ID = -12A
6
4
2
0
0 5 10 15 20 25 30 35 40
Qg, TOTAL GATE CHARGE (nC)
Fig. 13 Gate-Charge Characteristics
DMP4025LSSQ
20
18
16
14 TA = 25°C
12
10
8
6
4
2
0
0.2
10,000
0.4 0.6 0.8 1.0
-VSD, SOURCE-DRAIN VOLTAGE (V)
Fig. 10 Diode Forward Voltage vs. Current
1.2
1,000
100
10
TA = 150°C
TA = 125°C
TA = 85°C
TA = 25°C
1
0 5 10 15 20 25 30 35 40
-VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 12 Typical Leakage Current
vs. Drain-Source Voltage
DMP4025LSSQ
Document Number: DS38881 Rev: 1 - 2
5 of 7
www.diodes.com
May 2016
© Diodes Incorporated

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