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PDF DMN3026LVTQ Data sheet ( Hoja de datos )

Número de pieza DMN3026LVTQ
Descripción N-CHANNEL ENHANCEMENT MODE MOSFET
Fabricantes Diodes 
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DMN3026LVTQ
30V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS
30V
RDS(ON) Max
23m@ VGS = 10V
30m@ VGS = 4.5V
ID
TA = +25°C
6.6A
5.8A
Description
This new generation MOSFET is designed to minimize the on-state
resistance (RDS(ON)), yet maintain superior switching performance,
making it ideal for high-efficiency power management applications.
Features and Benefits
Low Input Capacitance
Low On-Resistance
Fast Switching Speed
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP Capable (Note 4)
Applications
DC-DC Converters
Power management functions
Backlighting
Mechanical Data
TSOT26
Case: TSOT26
Case Material: Molded Plastic, “Green” Molding Compound;
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish Tin Finish Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208 e3
Weight: 0.013 grams (Approximate)
Top View
D1
D2
6D
5D
G3
4S
Top View
Pin Configuration
Equivalent Circuit
Ordering Information (Note 5)
Notes:
Part Number
DMN3026LVTQ-7
DMN3026LVTQ-13
Case
TSOT26
TSOT26
Packaging
3,000/Tape & Reel
10,000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally the
same, except where specified. For more information, please refer to http://www.diodes.com/quality/product_compliance_definitions/.
5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
DMN3026LVTQ
Document number: DS38142 Rev. 1 - 2
1 of 8
www.diodes.com
August 2015
© Diodes Incorporated

1 page




DMN3026LVTQ pdf
0.05
0.04
0.03
0.02
VGS = 4.5V
ID = 6A
VGS = 10V
ID = 6.5A
0.01
0
-50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (C)
Figure 7 On-Resistance Variation with Temperature
20
18
16
14
TA = 150°C
12
10 TA = 125°C
8
6 TA = 85°C
TA = 25°C
4
TA = -55°C
2
0 0 0.3 0.6 0.9 1.2 1.5
VSD, SOURCE-DRAIN VOLTAGE (V)
Figure 9 Diode Forward Voltage vs. Current
VDS = 15V
ID = 4A
0 1 2 3 4 5 6 7 8 9 10 11 12 13
Qg, TOTAL GATE CHARGE (nC)
Figure 11 Gate Charge
DMN3026LVTQ
2
1.8
1.6
ID = 1mA
ID = 250µA
1.4
1.2
1
0.8
0.6
-50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (C)
Figure 8 Gate Threshold Variation vs. Ambient Temperature
10000
1000
f = 1MHz
Ciss
100
Coss
Crss
100 5 10 15 20 25
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 10 Typical Junction Capacitance
100
RDS(on)
Limited
30
10 PW = 10µs
DC
1 PW = 10s
PW = 1s
PW = 100ms
PW = 10ms
0.1 TJ(max) = 150°C
TA = 25°C
VGS = 10V
Single Pulse
PW = 1ms
PW = 100µs
DUT on 1 * MRP Board
0.01
0.1 1
10
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 12 SOA, Safe Operation Area
100
DMN3026LVTQ
Document number: DS38142 Rev. 1 - 2
5 of 8
www.diodes.com
August 2015
© Diodes Incorporated

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