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PDF DMN2008LFU Data sheet ( Hoja de datos )
| Número de pieza | DMN2008LFU | |
| Descripción | DUAL N-CHANNEL ENHANCEMENT MODE MOSFET | |
| Fabricantes | Diodes | |
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Product Summary
BVDSS
20V
RDS(ON) Max
5.4mΩ @ VGS = 4.5V
6.2mΩ @ VGS = 4.0V
6.4mΩ @ VGS = 3.7V
7.5mΩ @ VGS = 3.1V
9.6mΩ @ VGS = 2.5V
ID
TA = +25°C
14.5A
13.5A
13.0A
12.0A
10.5A
Description
This new generation MOSFET is designed to minimize the on-state
resistance (RDS(ON)) , yet maintain superior switching performance,
making it ideal for high efficiency power management applications.
Applications
Power Management Functions
Battery Pack
Load Switch
DMN2008LFU
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Features
Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
ESD Protected Gate
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Mechanical Data
Case: U-DFN2030-6 (Type B)
Case Material: Molded Plastic, ―Green‖ Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: – NiPdAu over Copper Leadframe.
Solderable per MIL-STD-202, Method 208 e4
Terminal Connections: See Diagram Below
Weight: 0.012 grams (Approximate)
U-DFN2030-6 (Type B)
D1 D2
G1 G2
ESD PROTECTED
Gate Protection
Diode
S1
Gate Protection
Diode
S2
Bottom View
Top View
Pin-Out
Equivalent Circuit
Ordering Information (Note 4)
Notes:
Part Number
DMN2008LFU-7
DMN2008LFU-13
Case
U-DFN2030-6 (Type B)
U-DFN2030-6 (Type B)
Packaging
3,000/Tape & Reel
10,000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green‖ products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http:// www.diodes.com/products/packages.html.
Marking Information
DMN2008LFU
Document number: DS38625 Rev. 4 - 2
N28
N28 = Product Type Marking Code
YYWW = Date Code Marking
YY = Last Two Digits of Year (ex: 16 for 2016)
WW = Week Code (01 to 53)
1 of 7
www.diodes.com
July 2016
© Diodes Incorporated
1 page  
1
D=0.7
D=0.5
D=0.3
0.1
D=0.1
D=0.05
D=0.9
DMN2008LFU
0.01
D=Single Pulse
0.001
1E-05
0.0001
D=0.02
D=0.01
D=0.005
RθJA(t) = r(t) * RθJA
RθJA = 121℃/W
Duty Cycle, D = t1 / t2
0.001
0.01
0.1
1
t1, PULSE DURATION TIME (sec)
Figure 13. Transient Thermal Resistance
10
100
1000
DMN2008LFU
Document number: DS38625 Rev. 4 - 2
5 of 7
www.diodes.com
July 2016
© Diodes Incorporated
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet DMN2008LFU.PDF ] | |
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