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PDF DMHC6070LSD Data sheet ( Hoja de datos )
| Número de pieza | DMHC6070LSD | |
| Descripción | 60V COMPLEMENTARY ENHANCEMENT MODE MOSFET H-BRIDGE | |
| Fabricantes | Diodes | |
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DMHC6070LSD
60V COMPLEMENTARY ENHANCEMENT MODE MOSFET H-BRIDGE
Product Summary
Device
N-Channel
P-Channel
V(BR)DSS
60V
-60V
RDS(ON) Max
100mΩ @ VGS = 10V
120mΩ @ VGS = 4.5V
170mΩ @ VGS = -10V
250mΩ @ VGS = -4.5V
ID Max
TA = 25°C
4.1A
3.7A
3.1A
2.6A
Description
This new generation complementary MOSFET H-Bridge
features low on-resistance achievable with low gate drive.
Applications
DC Motor Control
DC-AC Inverters
Features
2 x N + 2 x P Channels in a SOIC Package
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Mechanical Data
Case: SO-8
Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections Indicator: See diagram
Terminals: Finish – Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.074 grams (Approximate)
SO-8
H-Bridge
Top View
Top View
Pin Configuration
Internal Schematic
Ordering Information (Note 4)
Notes:
Part Number
DMHC6070LSD-13
Case
SO-8
Packaging
2,500/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
DMHC6070LSD
Document number: DS38714 Rev. 1 - 2
85
HC6070LD
YY WW
= Manufacturer’s Marking
HC6070LD = Product Type Marking Code
YYWW = Date Code Marking
YY = Year (ex: 16 = 2016)
WW = Week (01 - 53)
14
1 of 10
www.diodes.com
April 2016
© Diodes Incorporated
1 page  
0.2
0.18
0.16
0.14
VGS = 4.5V
ID = 2A
0.12
0.1
VGS = 10V
ID = 5A
0.08
0.06
0.04
0.02
0-50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (C)
Figure 7 On-Resistance Variation with Temperature
10
9
8
7
6
5
TA = 150°C
TA = 25°C
4
TA = 125°C
TA = -55°C
TA = 85°C
3
2
1
00 0.3 0.6 0.9 1.2 1.5
VSD, SOURCE-DRAIN VOLTAGE (V)
Figure 9 Diode Forward Voltage vs. Current
10
8
6
VDS = 30V
4 ID = 3A
2
00 2 4 6 8 10 12
Qg, TOTAL GATE CHARGE (nC)
Figure 11 Gate Charge
DMHC6070LSD
3
2.5
2
ID = 1mA
1.5 ID = 250µA
1
0.5
0-50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (C)
Figure 8 Gate Threshold Variation vs. Ambient Temperature
10000
f = 1MHz
1000
Ciss
100
Coss
Crss
100 5 10 15 20 25
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 10 Typical Junction Capacitance
100
RD S( o n )
Limited
PW = 100µs
10
30
DC
1
PW = 10s
PW = 1s
PW = 100ms
0.1 TJ(m ax) = 150°C
PW = 10ms
TA = 25°C
PW = 1ms
VGS = 10V
Single Pulse
0.01 DUT on 1 * MRP Board
0.1 1
10
VDS , DRAIN-SOURCE VOLTAGE (V)
Figure 12 SOA, Safe Operation Area
100
DMHC6070LSD
Document number: DS38714 Rev. 1 - 2
5 of 10
www.diodes.com
April 2016
© Diodes Incorporated
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| PDF Descargar | [ Datasheet DMHC6070LSD.PDF ] | |
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