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PDF DMS2120LFWB Data sheet ( Hoja de datos )

Número de pieza DMS2120LFWB
Descripción P-CHANNEL ENHANCEMENT MODE MOSFET
Fabricantes Diodes 
Logotipo Diodes Logotipo



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DMS2120LFWB
P-CHANNEL ENHANCEMENT MODE MOSFET WITH INTEGRATED SBR®
SUPER BARRIER RECTIFIER
Features
Low On-Resistance
95mΩ @VGS = -4.5V
120mΩ @VGS = -2.5V
150mΩ (typ) @VGS = -1.8V
Low Gate Threshold Voltage, -1.3V Max
Fast Switching Speed
Low Input/Output Leakage
Incorporates Low VF Super Barrier Rectifier (SBR)
Low Profile, 0.5mm Max Height
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: U-DFN3020-8 Type B
Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Terminals: Finish – NiPdAu annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208 e4
Weight: 0.011 grams (approximate)
U-DFN3020-8
Type B
Top View
Bottom View
SK
G
DA
Equivalent Circuit
KA
KA
DS
DG
Bottom View
Pin Configuration
Ordering Information (Note 4)
Notes:
Part Number
DMS2120LFWB-7
Case
DFN3020B-8
Packaging
3000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com.
Marking Information
MF YM
MF = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: V = 2008)
M = Month (ex: 9 = September)
Date Code Key
Year
Code
Month
Code
2008
V
Jan
1
2009
W
Feb
2
2010
X
2011
Y
Mar Apr May
345
2012
Z
Jun
6
2013
A
Jul
7
2014
B
2015
C
2016
D
Aug Sep Oct Nov
8 9ON
2017
E
Dec
D
SBR is a registered trademark of Diodes Incorporated.
DMS2120LFWB
Document number: DS31667 Rev. 5 - 2
1 of 7
www.diodes.com
September 2012
© Diodes Incorporated

1 page




DMS2120LFWB pdf
DMS2120LFWB
D1, SBR
0.7 1
0.6 TA = 150°C
0.1 TA = 125°C
0.5
0.4
0.01
TA = 85°C
0.3
TA = 25°C
0.2
0.001
TA = -55°C
0.1
0
0 0.5 1 1.5
IF(AV), AVERAGE FORWARD CURRENT (A)
Fig. 10 Forward Power Dissipation
10,000
0.0001
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 11 Typical Forward Characteristics
10,000
1,000
100
10
TA = 150°C
TA = 125°C
TA = 85°C
1,000
100
f = 1MHz
1 TA = 25°C
0.1
10
0.01
0 5 10 15 20 25 30 35 40
VR, INSTANTANEOUS REVERSE VOLTAGE (V)
Fig. 12 Typical Reverse Characteristics
1.6
1.4
1.2 Note 5
1.0
1
0.1 1
10 100
VR, DC REVERSE VOLTAGE (V)
Fig. 13 Total Capacitance vs. Reverse Voltage
150
125
100
0.8 75
0.6
50
0.4
25
0.2
0
25 50
75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Fig. 14 Forward Current Derating Curve
SBR is a registered trademark of Diodes Incorporated.
DMS2120LFWB
Document number: DS31667 Rev. 5 - 2
175
5 of 7
www.diodes.com
0
0
10 20 30
VR, DC REVERSE VOLTAGE (V)
Fig. 15 Operating Temperature Derating
40
September 2012
© Diodes Incorporated

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