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PDF DMG4710SSS Data sheet ( Hoja de datos )
| Número de pieza | DMG4710SSS | |
| Descripción | N-CHANNEL ENHANCEMENT MODE MOSFET | |
| Fabricantes | Diodes | |
| Logotipo |  |
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DMG4710SSS
N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE
Product Summary
V(BR)DSS
30V
RDS(on)
12.5mΩ @ VGS= 10V
14.8mΩ @ VGS= 4.5V
ID max
TA = 25°C (Note 5)
11.7A
10.8A
Description and Applications
This new generation MOSFET has been designed to minimize the on-
state resistance (RDS(on)) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
• DC-DC Converters
• Power management functions
Features
• DIOFET utilizes a unique patented process to monolithically
integrate a MOSFET and a Schottky in a single die to deliver:
• Low RDS(ON) - minimizes conduction losses
• Low VSD - reducing the losses due to body diode conduction
• Low Qrr - lower Qrr of the integrated Schottky reduces body
diode switching losses
• Low gate capacitance (Qg/Qgs) ratio – reduces risk of shoot-
through or cross conduction currents at high frequencies
• Avalanche rugged – IAR and EAR rated
• Lead Free, RoHS Compliant (Note 1)
• "Green" Device (Note 2)
• Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
• Case: SO-8
• Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminal Connections: See Diagram Below
• Weight: 0.072 grams (approximate)
Top View
SD
SD
SD
GD
Top View
Internal Schematic
Ordering Information (Note 3)
Notes:
Part Number
DMG4710SSS-13
Case
SO-8
1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com.
3. For packaging details, go to our website at http://www.diodes.com.
Packaging
2500 / Tape & Reel
Marking Information
8
G4710SS
YY WW
5
14
Logo
Part no.
Xth week: 01 ~ 53
Year: “09” = 2009
Year: “10” = 2010
DMG4710SSS
Document number: DS32055 Rev. 6 - 2
1 of 6
www.diodes.com
November 2010
© Diodes Incorporated
1 page  
DMG4710SSS
1
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.05
D = 0.02
0.01
D = 0.01
D = 0.005
D = Single Pulse
0.001
0.0001
0.001
D = 0.9
RθJA(t) = r(t) * RθJA
RθJA = 80°C/W
P(pk)
t1
t2
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1/t2
0.01
0.1
1
10
t1, PULSE DURATION TIME (s)
Fig. 12 Transient Thermal Response
100
1,000
Package Outline Dimensions
e
D
b
E1 E
A1
L
Detail ‘A’
Gauge Plane
Seating Plane
A2 A A3
h
45°
7°~9°
Detail ‘A’
SO-8
Dim Min Max
A - 1.75
A1 0.10 0.20
A2 1.30 1.50
A3 0.15 0.25
b 0.3 0.5
D 4.85 4.95
E 5.90 6.10
E1 3.85 3.95
e 1.27 Typ
h - 0.35
L 0.62 0.82
θ 0° 8°
All Dimensions in mm
Suggested Pad Layout
X
C2
Y
DMG4710SSS
Document number: DS32055 Rev. 6 - 2
Dimensions Value (in mm)
X 0.60
C1 Y 1.55
C1 5.4
C2 1.27
5 of 6
www.diodes.com
November 2010
© Diodes Incorporated
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet DMG4710SSS.PDF ] | |
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