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PDF ADL5363 Data sheet ( Hoja de datos )
| Número de pieza | ADL5363 | |
| Descripción | 2300 MHz to 2900 MHz Balanced Mixer | |
| Fabricantes | Analog Devices | |
| Logotipo |  |
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Data Sheet
2300 MHz to 2900 MHz Balanced Mixer,
LO Buffer and RF Balun
ADL5363
FEATURES
RF frequency range of 2300 MHz to 2900 MHz
IF frequency range of dc to 450 MHz
Power conversion loss: 7.7 dB
SSB noise figure of 7.6 dB
Input IP3 of 31 dBm
Typical LO drive of 0 dBm
Single-ended, 50 Ω RF and LO input ports
High isolation SPDT LO input switch
Single-supply operation: 3.3 V to 5 V
Exposed pad, 5 mm × 5 mm 20-lead LFCSP
1500 V HBM/1250 V FICDM ESD performance
APPLICATIONS
Cellular base station receivers
Transmit observation receivers
Radio link downconverters
GENERAL DESCRIPTION
The ADL5363 uses a highly linear, doubly balanced passive
mixer core along with integrated RF and local oscillator (LO)
balancing circuitry to allow for single-ended operation. The
ADL5363 incorporates an RF balun to provide optimal
performance over a 2300 MHz to 2900 MHz input frequency
range. The balanced passive mixer arrangement provides good
LO-to-RF leakage, typically better than −30 dBm, and excellent
intermodulation performance. The balanced mixer core also
provides extremely high input linearity, allowing the device to
be used in demanding cellular applications where in-band
blocking signals might otherwise result in the degradation of
dynamic performance.
FUNCTIONAL BLOCK DIAGRAM
VCMI
20
IFOP
19
IFON
18
PWDN
17
COMM
16
VPMX 1
ADL5363
15 LOI2
RFIN 2
14 VPSW
RFCT 3
COMM 4
BIAS
GENERATOR
13 VGS1
12 VGS0
COMM 5
11 LOI1
6
VLO3
7
LGM3
8
VLO2
9
LOSW
10
NC
NC = NO CONNECT
Figure 1.
The ADL5363 provides two switched LO paths that can be used
in TDD applications where it is desirable to rapidly switch between
two local oscillators. LO current can be externally set using a
resistor to minimize dc current commensurate with the desired
level of performance. For low voltage applications, the ADL5363
is capable of operation at voltages down to 3.3 V with
substantially reduced current. For low voltage operation, an
additional logic pin is provided to power down (<200 µA) the
circuit when desired.
The ADL5363 is fabricated using a BiCMOS high performance
IC process. The device is available in a 5 mm × 5 mm, 20-lead
LFCSP and operates over a −40°C to +85°C temperature range.
An evaluation board is also available.
Table 1. Passive Mixers
Single
RF Frequency (MHz) Mixer
500 to 1700
ADL5367
1200 to 2500
ADL5365
2300 to 2900
ADL5363
Single Mixer
and IF Amp
ADL5357
ADL5355
ADL5353
Dual Mixer
and IF Amp
ADL5358
ADL5356
ADL5354
Rev. A
Document Feedback
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibilityisassumedbyAnalogDevices for itsuse,nor foranyinfringementsofpatentsor other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarksandregisteredtrademarksarethepropertyoftheirrespectiveowners.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781.329.4700 ©2011–2015 Analog Devices, Inc. All rights reserved.
Technical Support
www.analog.com
1 page  
ADL5363
Data Sheet
5 V PERFORMANCE
VS = 5 V, IS = 100 mA, TA = 25°C, fRF = 2535 MHz, fLO = 2738 MHz, LO power = 0 dBm, VGS0 = VGS1 = 0 V, and ZO = 50 Ω, unless
otherwise noted.
Table 3.
Parameter
Test Conditions/Comments
Min Typ
DYNAMIC PERFORMANCE
Power Conversion Loss
Including 1:1 IF port transformer and PCB loss
7.7
SSB Noise Figure
7.6
Input Third-Order Intercept (IIP3)
fRF1 = 2534.5 MHz, fRF2 = 2535.5 MHz, fLO = 2738 MHz,
each RF tone at 0 dBm
31
Input Second-Order Intercept (IIP2)
fRF1 = 2535 MHz, fRF2 = 2585 MHz, fLO = 2738 MHz,
each RF tone at 0 dBm
62
Input 1 dB Compression Point (IP1dB)1 Exceeding 20 dBm RF power results in damage to the device
25
LO-to-IF Leakage
Unfiltered IF output
−22
LO-to-RF Leakage
−32
RF-to-IF Isolation
−44
IF/2 Spurious
−10 dBm input power
−61
IF/3 Spurious
−10 dBm input power
−70
POWER SUPPLY
Positive Supply Voltage
4.5 5
Quiescent Current
VS = 5 V
100
Max Unit
dB
dB
dBm
dBm
dBm
dBm
dBm
dBc
dBc
dBc
5.5 V
mA
1 Exceeding 20 dBm RF power results in damage to the device.
3.3 V PERFORMANCE
VS = 3.3 V, IS = 60 mA, TA = 25°C, fRF = 2535 MHz, fLO = 2738 MHz, LO power = 0 dBm, R9 = 226 Ω, VGS0 = VGS1 = 0 V, and ZO = 50 Ω,
unless otherwise noted.
Table 4.
Parameter
DYNAMIC PERFORMANCE
Power Conversion Loss
SSB Noise Figure
Input Third-Order Intercept (IIP3)
Input Second-Order Intercept (IIP2)
POWER SUPPLY
Positive Supply Voltage
Quiescent Current
Test Conditions/Comments
Including 1:1 IF port transformer and PCB loss
fRF1 = 2534.5 MHz, fRF2 = 2535.5 MHz, fLO = 2738 MHz,
each RF tone at 0 dBm
fRF1 = 2535 MHz, fRF2 = 2585 MHz, fLO = 2738 MHz,
each RF tone at 0 dBm
VS = 5 V
Min Typ
7.4
6.8
26
56
Max Unit
dB
dB
dBm
dBm
3.3 V
60 mA
Rev. A | Page 4 of 24
5 Page 
ADL5363
Data Sheet
VS = 5 V, IS = 100 mA, TA = 25°C, fRF = 2535 MHz, fLO = 2738 MHz, LO power = 0 dBm, VGS0 = VGS1 = 0 V, and ZO = 50 Ω, unless
otherwise noted.
12 –30
11
10
9
TA = +85°C
8
7
TA = +25°C
TA = –40°C
6
5
–35
–40
–45
–50
–55
TA = +85°C
–60
–65 TA = +25°C TA = –40°C
–70
4
–6 –4 –2
024
LO POWER (dBm)
6
8
Figure 18. Power Conversion Loss vs. LO Power
10
–75
2.30 2.35 2.40 2.45 2.50 2.55 2.60 2.65 2.70 2.75 2.80 2.85 2.90
RF FREQUENCY (GHz)
Figure 21. IF/2 Spurious vs. RF Frequency
36
34
32
TA = –40°C
30 TA = +25°C
28 TA = +85°C
26
24
22
20
–6 –4 –2
024
LO POWER (dBm)
6
Figure 19. Input IP3 vs. LO Power
8 10
–20
–30
–40
–50
–60
TA = +85°C
–70
TA = –40°C
–80 TA = +25°C
–90
2.30 2.35 2.40 2.45 2.50 2.55 2.60 2.65 2.70 2.75 2.80 2.85 2.90
RF FREQUENCY (GHz)
Figure 22. IF/3 Spurious vs. RF Frequency
80
70 TA = +85°C
60
TA = –40°C
50 TA = +25°C
40
30
20
10
0
–6 –4 –2
024
LO POWER (dBm)
6
Figure 20. Input IP2 vs. LO Power
8 10
Rev. A | Page 10 of 24
11 Page | ||
| Páginas | Total 25 Páginas | |
| PDF Descargar | [ Datasheet ADL5363.PDF ] | |
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