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PDF HMC374SC70E Data sheet ( Hoja de datos )

Número de pieza HMC374SC70E
Descripción GaAs pHEMT LOW NOISE AMPLIFIER
Fabricantes Analog Devices 
Logotipo Analog Devices Logotipo



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Typical Applications
The HMC374SC70E is ideal for:
• Cellular/PCS/3G
• WCS, MMDS & ISM
• Fixed Wireless & WLAN
• Private Land Mobile Radio
Functional Diagram
HMC374SC70E
v01.0814
GaAs pHEMT LOW NOISE AMPLIFIER
0.3 - 3.0 GHz
Features
Single Supply: Vdd = +3.0 to +3.6V
Broadband Performance
Low Noise Figure: 1.6 dB
High Output IP3: +35 dBm
High Gain: 15 dB @ 0.6 GHz
General Description
The HMC374SC70E is a general purpose broad-
band Low Noise Amplifier (LNA) for use in the 0.3 -
3 GHz frequency range. The LNA provides 15 dB of
gain and a 1.6 dB noise figure from a single positive
supply of +3.0 to +3.6V. The low noise figure coupled
with a high P1dB (17 dBm) and high OIP3 (35 dBm)
make this part ideal for cellular applications. The
compact LNA is designed for repeatable gain and
noise figure performance. To minimize board area the
design is offered in a low cost SC70E package that
occupies only 0.089" x 0.053".
Electrical Specifications, Vdd= +3.3V
Parameter
Min. [2] Typ.[1] Max. [2] Min. [2]
Frequency
0.6
Gain
14 15
13
Gain Variation Over Temperature
(-40°C to +25°C)
0.005
Gain Variation Over Temperature
(+25 °C to +85 °C)
0.004
Noise Figure
2 2.6
Input Return Loss
4.5 5.5
6
Output Return Loss
5.5 7.5
8
Output 1 dB Compression (P1dB)
15.5 16.5
16
Saturated Output Power (Psat)
17.5 18.5
17.5
Output Third Order Intercept (OIP3)
34
Supply Current (Idd) (Vdd = +3.3V)
75
Supply Voltage (Vdd)
3.0 3.3 3.6 3.0
[1] Typical values are determined at TA=+25°C
[2] Minimum and maximum values are determined from TA=-40°C to TA=+85°C
Typ. [1]
1.0
14.5
0.008
0.005
1.6
7.5
10
17
18.5
33.5
75
3.3
Max. [2] Min. [2]
6
2.3
8
13
16.5
18
3.6 3.0
Typ. [1]
3.0
8.5
0.012
0.008
1.8
9
15
18
19
36
75
3.3
Max. [2]
2.2
3.6
Units
GHz
dB
dB/°C
dB
dBm
mA
V
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1 page




HMC374SC70E pdf
Absolute Maximum Ratings
Drain Bias Voltage (Vdd)
RF Input Power (RFIN)(Vdd = +5.0 Vdc)
Channel Temperature
Continuous Pdiss (T = 85 °C)
(derate 4.88 mW/°C above 85 °C)
Thermal Resistance
(channel to lead)
Storage Temperature
Operating Temperature
ESD Sensitivity (HBM)
+7.0 Vdc
15 dBm
150 °C
0.32 W
205 °C/W
-65 to +150 °C
-40 to +85 °C
Class 0
Outline Drawing
HMC374SC70E
v01.0814
GaAs pHEMT LOW NOISE AMPLIFIER
0.3 - 3.0 GHz
Typical Supply Current vs. Vdd
Vdd (V)
3
3.3
3.6
Idd (mA)
75
75
75
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
NOTES:
1. PACKAGE BODY MATERIAL: LOW STRESS INJECTION MOLDED
PLASTIC SILICA AND SILICON IMPREGNATED.
2. LEAD MATERIAL: COPPER ALLOY
3. LEAD PLATING: 100% MATTE TIN.
4. DIMENSIONS ARE IN INCHES [MILLIMETERS]
5. C HARACTERS TO BE HELVETICA MEDIUM, .015 HIGH,
WHITE INK OR LASER, LOCATED APPROXIMATELY AS SHOWN.
6. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE.
7. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE.
8. ALL GROUND LEADS MUST BE SOLDERED TO PCB RF GROUND.
Package Information
Part Number
Package Body Material
HMC374SC70E RoHS-compliant Low Stress Injection Molded Plastic
[1] Max peak reflow temperature of 235 °C
[2] Max peak reflow temperature of 260 °C
[3] 4-Digit lot number XXXX
Lead Finish
100% matte Sn
MSL Rating
MSL1 [2]
Package Marking [3]
H374E
XXXX
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