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Teilenummer | CJS8820 |
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Beschreibung | Dual N-Channel MOSFET | |
Hersteller | JCET | |
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Gesamt 5 Seiten JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
CJS8820
V(BR)DSS
20V
TSSOP8 Plastic-Encapsulate MOSFETS
Dual N-Channel MOSFET
RDS(on)MAX
21mΩ@10V
24mΩ @4.5V
28mΩ@3.8V
32mΩ@2.5V
50mΩ@1.8V
ID
7A
TSSOP8
DESCRIPTION
The CJS8820 uses advanced trench technology to provide excellent
RDS(ON) and low gate charge. It is ESD protected. This device is suitable
for use as a uni-directional or bi-directional load switch,facilitated by its
common-drain configuration.
MARKING:
Equivalent Circuit
S8820= Device code
YY=Date Code
Solid dot = Pin1 indicator
Solid dot = Green molding compound device,
if none,the normal device.
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Thermal Resistance from Junction to Ambient
Junction Temperature
Storage Temperature
Lead Temperature for Soldering Purposes(1/8’’ from case for 10 s)
*Repetitive rating:Pluse width limited by junction temperature
Symbol
VDS
VGS
ID
IDM *
RθJA
Tj
Tstg
TL
www.cj-elec.com
1
Value
20
±12
7
30
125
150
-55~+150
260
Unit
V
V
A
A
℃/W
℃
℃
℃
G,Mar,2016
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Seiten | Gesamt 5 Seiten | |
PDF Download | [ CJS8820 Schematic.PDF ] |
Teilenummer | Beschreibung | Hersteller |
CJS8820 | Dual N-Channel MOSFET | JCET |
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