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Número de pieza | CJCD2007 | |
Descripción | Dual N-Channel MOSFET | |
Fabricantes | JCET | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de CJCD2007 (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
No Preview Available ! JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
DFNWB2×3-6L-C Plastic-Encapsulate MOSFETS
CJCD2007
V(BR)DSS
20V
Dual N-Channel MOSFET
RDS(on)MAX
20 mΩ@10V
22 mΩ@4.5V
24mΩ@3.8V
26 mΩ@2.5V
35mΩ@1.8V
ID
7A
DFNWB2×3-6L-C
DESCRIPTION
The CJCD2007 uses advanced trench technology to provide
excellent RDS(ON) and low gate charge. It is ESD protected. This device is
suitable for use as a uni-directional or bi-directional load switch,facilitated
by its common-drain configuration.
MARKING:
Equivalent Circuit
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Thermal Resistance from Junction to Ambient
Junction Temperature
Storage Temperature
Lead Temperature for Soldering Purposes(1/8’’ from case for 10 s)
*Repetitive rating:Pluse width limited by junction temperature.
www.cj-elec.com
1
Symbol
VDS
VGS
ID
IDM *
RθJA
Tj
Tstg
TL
Value
20
±12
7
30
125
150
-55~+150
260
Unit
V
V
A
A
℃/W
℃
℃
℃
D,May,2015
1 page DFNWB2X3-6L Tape and Reel
www.cj-elec.com
5
D,May,2015
5 Page |
Páginas | Total 5 Páginas | |
PDF Descargar | [ Datasheet CJCD2007.PDF ] |
Número de pieza | Descripción | Fabricantes |
CJCD2004 | Dual N-Channel MOSFET | JCET |
CJCD2005 | Dual N-Channel MOSFET | JCET |
CJCD2007 | Dual N-Channel MOSFET | JCET |
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