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Teilenummer | CJCD2005 |
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Beschreibung | Dual N-Channel MOSFET | |
Hersteller | JCET | |
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Gesamt 5 Seiten JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
DFNWB2×3-6L-C Plastic-Encapsulate MOSFETS
CJCD2005
V(BR)DSS
20V
Dual N-Channel MOSFET
RDS(on)MAX
13mΩ@10V
14mΩ @4.5V
15.5mΩ@3.8V
19 mΩ@2.5V
27mΩ@1.8V
ID
8A
DFNWB2× -6L-C
DESCRIPTION
The CJCD2005 uses advanced trench technology to provide
excellent RDS(ON) and low gate charge. It is ESD protected. This device is
suitable for use as a uni-directional or bi-directional load switch,facilitated
by its common-drain configuration.
MARKING:
Equivalent Circuit
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Thermal Resistance from Junction to Ambient
Junction Temperature
Storage Temperature
Lead Temperature for Soldering Purposes(1/8’’ from case for 10 s)
*Repetitive rating:Pluse width limited by junction temperature.
Symbol
VDS
VGS
ID
IDM *
RθJA
Tj
Tstg
TL
Value
20
±12
8
30
125
150
-55~+150
260
Unit
V
V
A
A
℃/W
℃
℃
℃
www.cj-elec.com
1
C,May,2015
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Seiten | Gesamt 5 Seiten | |
PDF Download | [ CJCD2005 Schematic.PDF ] |
Teilenummer | Beschreibung | Hersteller |
CJCD2004 | Dual N-Channel MOSFET | JCET |
CJCD2005 | Dual N-Channel MOSFET | JCET |
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