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Teilenummer | 8NM60 |
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Beschreibung | N-CHANNEL POWER MOSFET | |
Hersteller | Unisonic Technologies | |
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Gesamt 7 Seiten UNISONIC TECHNOLOGIES CO., LTD
8NM60
8.0A, 600V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC 8NM60 is a high voltage super junction MOSFET
and is designed to have better characteristics, such as fast
switching time, low gate charge, low on-state resistance and have
a high rugged avalanche characteristics. This power MOSFET is
usually used at high speed switching applications in switching
power supplies and adaptors.
FEATURES
* RDS(ON) < 0.78Ω @ VGS = 10V, ID = 4.0A
* Fast Switching Capability
* Avalanche Energy Tested
* Improved dv/dt Capability, High Ruggedness
SYMBOL
Power MOSFET
ORDERING INFORMATION
Order Number
Lead Free
Halogen Free
8NM60L-TA3-T
8NM60G-TA3-T
8NM60L-TF1-T
8NM60G-TF1-T
8NM60L-TF2-T
8NM60G-TF2-T
8NM60L-TF3-T
8NM60G-TF3-T
8NM60L-TM3-T
8NM60G-TM3-T
8NM60L-TN3-R
8NM60G-TN3-R
Note: Pin Assignment: G: Gate D: Drain S: Source
Package
TO-220
TO-220F1
TO-220F2
TO-220F
TO-251
TO-252
Pin Assignment
123
GDS
GDS
GDS
GDS
GDS
GDS
Packing
Tube
Tube
Tube
Tube
Tube
Tape Reel
www.unisonic.com.tw
Copyright © 2016 Unisonic Technologies Co., Ltd
1 of 7
QW-R205-088.D
8NM60
TEST CIRCUITS AND WAVEFORMS (Cont.)
VDS
VGS
RG
10V
Pulse Width≤ 1μs
Duty Factor≤0.1%
RL
D.U.T.
VDD
Switching Test Circuit
Power MOSFET
Switching Waveforms
Same
50kΩ
Type as
12V 0.2µF
0.3µF
D.U.T.
VDS
VGS
3mA
DUT
Gate Charge Test Circuit
Gate Charge Waveform
10V
RG
tp
L
VDS
BVDSS
IAS
VD
D.U.T.
VDD
ID(t)
tp
VDS(t)
Time
Unclamped Inductive Switching Test Circuit
Unclamped Inductive Switching Waveforms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
6 of 7
QW-R205-088.D
6 Page | ||
Seiten | Gesamt 7 Seiten | |
PDF Download | [ 8NM60 Schematic.PDF ] |
Teilenummer | Beschreibung | Hersteller |
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