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RJH60D7BDPQ-E0 Schematic ( PDF Datasheet ) - Renesas

Teilenummer RJH60D7BDPQ-E0
Beschreibung IGBT
Hersteller Renesas
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Gesamt 10 Seiten
RJH60D7BDPQ-E0 Datasheet, Funktion
Preliminary Datasheet
RJH60D7BDPQ-E0
600V - 50A - IGBT
Application: Inverter
R07DS0795EJ0300
Rev.3.00
Jul 20, 2016
Features
Short circuit withstand time (5 s typ.)
Low collector to emitter saturation voltage
VCE(sat) = 1.6 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25°C)
Built in fast recovery diode (25 ns typ.) in one package
Trench gate and thin wafer technology
High speed switching
tf = 50 ns typ. (at VCC = 300 V, VGE = 15 V, IC = 50 A, Rg = 5 , Ta = 25°C, inductive load)
Outline
RENESAS Package code: PRSS0003ZE-A
(Package name: TO-247)
C
4
123
1. Gate
2. Collector
G 3. Emitter
4. Collector
E
Absolute Maximum Ratings
Item
Collector to emitter voltage / diode reverse voltage
Gate to emitter voltage
Collector current
Tc = 25°C
Tc = 100°C
Collector peak current
Collector to emitter diode forward current
Collector to emitter diode forward peak current
Collector dissipation
Junction to case thermal resistance (IGBT)
Junction to case thermal resistance (Diode)
Junction temperature
Storage temperature
Notes: 1. PW 10 s, duty cycle 1%
2. Value at Tc = 25C
Symbol
VCES / VR
VGES
IC
IC
ic(peak) Note1
iDF
iDF(peak) Note1
PC Note2
j-c Note2
j-cd Note2
Tj
Tstg
Ratings
600
±30
90
50
200
30
120
300
0.42
1.1
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
A
W
°C/W
°C/W
°C
°C
R07DS0795EJ0300 Rev.3.00
Jul 20, 2016
Page 1 of 9






RJH60D7BDPQ-E0 Datasheet, Funktion
RJH60D7BDPQ-E0
10000
Typical Capacitance vs.
Collector to Emitter Voltage
Cies
1000
100 Coes
VGE = 0 V
f = 1 MHz
Cres
10 Tc = 25°C
0 50 100 150 200 250 300
Collector to Emitter Voltage VCE (V)
Reverse Recovery Time vs.
Diode Current Slope (Typical)
300
VCC = 300 V
250 IF = 50 A
200
150
Tc = 150°C
100
50
25°C
0
0 40 80 120 160 200
Diode Current Slope di/dt (A/μs)
Reverse Recovery Current vs.
Diode Current Slope (Typical)
16
VCC = 300 V
IF = 50 A
12
8
Tc = 150°C
4
25°C
0
0 40 80 120 160 200
Diode Current Slope di/dt (A/μs)
Preliminary
Dynamic Input Characteristics (Typical)
800
VCE = 300 V
IC = 50 A
Tc = 25°C
600
VGE
16
12
400 8
200 4
VCE
0
0 40
0
80 120 160 200
Gate Charge Qg (nc)
Reverse Recovery Charge vs.
Diode Current Slope (Typical)
0.5
VCC = 300 V
IF = 50 A
0.4
0.3 Tc = 150°C
0.2
0.1 25°C
0
0 40 80 120 160 200
Diode Current Slope di/dt (A/μs)
Forward Current vs. Forward Voltage (Typical)
120
VCE = 0 V
100 Pulse Test
80
Tc = 150°C
60
40
25°C
20
0
01234
C-E Diode Forward Voltage VCEF (V)
R07DS0795EJ0300 Rev.3.00
Jul 20, 2016
Page 6 of 9

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