RF5410 Datasheet PDF - RFMD
| Part Number | RF5410 | |
| Description | LTE MMMB PA Module | |
| Manufacturers | RFMD | |
| Logo |  |
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There is a preview and RF5410 download ( pdf file ) link at the bottom of this page. Total 30 Pages | ||
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RFMD + TriQuint = Qorvo
RF5410
LTE MMMB PA Module
RF5410 is a multi-mode, multi-band (MMMB) linear Power
Amplifier Module (PAM) designed for use as the final amplification
stage in multi-mode WCDMA, CDMA2000, TD-SCDMA, and LTE
mobile cellular equipment. The high efficiency PAM contains three
amplifier paths for Low, Mid, and High Band frequencies followed
by switch outputs for multi-band coverage. RF5410 band select
and bias are programmed through a Mobile Industry Processor
Interface (MIPI). RF5410 supports Average Power Tracking
(APT) for current consumption optimization at various power
levels and modulations.
Functional Block Diagram
Ordering Information
RF5410PCK-410
Evaluation Board Sample Kit
RF5410SB
5-Piece Sample Bag
RF5410SQ
25-Piece Sample Bag
RF5410SR
RF5410TR13
100-Piece 7 inch Sample Reel
5000-Piece 13” Reel
RF5410DK
Design Kit, RF5410PCK-410 + RD2000 Communication Bd
RF5410
Package Style: Module, 42-Pin
4.00mm x 6.80mm x 0.9mm
Features
■ Multi-mode and Multi-band
Capabilities.
■ Integrated Switch Supports
Multiple TX and RX Paths
■ Integrated Blocking and
Decoupling Capacitors
■ MIPI RFFE Digital Control
Interface
■ Optimized use with DC-DC
Converter Operation
■ Average Power Tracking
■ Programmable Bias Level Control
■ High Efficiency: 43%
■ Rel 99 POUT +28.5dBm
Applications
■ WCDMA, CDMA2000, TD-SDMA,
FDD, TDD, LTE Mobile Devices
■ WCDMA Bands :
■ 1,2,3,4,5,8
■ CDMA Bands :
■ BC 0, BC 1
■ TD-SCDMA Bands :
■ 34,39,40
■ FDD LTE Bands :
■ 1,2,3,4,5,7,8,20
■ TDD LTE Bands :
■ 38,39,40,41
■ LTE Channel Bandwidths
5 to 20MHz
RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421
For sales or technical support, contact RFMD at +1.336.678.5570 or [email protected].
DS20160809
RF MICRO DEVICES® and RFMD® are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names,
trademarks, and registered trademarks are the property of their respective owners. ©2013, RF Micro Devices, Inc.
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Parameter
MB: Band 1, 2, 3, 4
WCDMA
P.2
Harmonics, 2fo
Harmonics, 3fo
Harmonics, 4fo and higher
Input impedance VSWR
Gain Switching Time
Insertion Phase Shift
Stability, Spurious Output Levels
Ruggedness
RFMD + TriQuint = Qorvo
Specification
Min Typ
Max
Unit
-48
-49
-60
1.8:1
5
dBc
dBc
dBc
VSWR
10 µS
°
-70 dBc
No damage or permanent degradation to device
Condition
Nominal test conditions unless otherwise stated.
All unused ports terminated in 50Ω.
TA=+25°C; VBATT=3.8V; VCC=3.4V
Mode=HPM; Modulation: Rel99
POUT ≤ Pmax, all power outs
POUT ≤ Pmax, all power outs
POUT ≤ Pmax, all power outs
No External matching
Time required for output power to settle to within ±1dB of
the final output power for any gain mode transition.
Phase shift at 13.5dBm when switching from HPM to
LPM
Output Load VSWR = 6:1, All phase angles
PIN ≤ 10dBm, PFWD ≤ Max Pout
Temp -20 to +85C, Vbatt = Vcc = 3.0 to 4.6V
Output Load VSWR = 10:1, All phase angles
PFWD ≤ Max Pout, Closed Loop Conditions
Temp -20 to +85C, Vbatt = Vcc = 4.6V
RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421
DS20160809
For sales or technical support, contact RFMD at +1.336.678.5570 or [email protected].
The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of
third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended
application circuitry and specifications at any time without prior notice.
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| Information | Total 30 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ RF5410.PDF Datasheet ] | |
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