|
|
Teilenummer | WSB5503W |
|
Beschreibung | Middle Power Schottky Barrier Diode | |
Hersteller | Will Semiconductor | |
Logo | ||
Gesamt 3 Seiten WSB5503W
Middle Power Schottky Barrier Diode
Features
1A Average rectified forward current
Low forward voltage
Low leakage current
Small package SOD-323
WSB5503W
Http://www.sh-willsemi.com
SOD-323
Applications
Switching circuit
Middle current rectification
Absolute maximum ratings
Parameter
Reverse voltage (repetitive peak)
Reverse voltage (DC)
Average rectified forward current
Peak forward current (1)
Junction temperature
Operating temperature
Storage temperature
Circuit
Marking
Symbol
VRM
VR
IO
IPK
TJ
Topr
Tstg
Value
40
40
1
25
125
-40 ~ 85
-55 ~ 150
Unit
V
V
A
A
OC
OC
OC
Electronics characteristics (TA=25oC)
Parameter
Symbol
Condition
Forward voltage
Reverse current
Junction capacitance
VF IF=1A
IR VR=VR
CJ VR=4V, F=1MHz
Order Informations
Device
Package
WSB5503W-2/TR
SOD-323
Note 1 : Pulse Width=1us, Single Pulse
Note 2 : * = Month code (A~Z); . L = Device code
Min.
-
-
-
Typ.
0.5
10
-
Marking
*.L (2)
Max.
0.57
50
120
Unit
V
uA
pF
Shipping
3000/Reel&Tape
Will Semiconductor Ltd.
1 Jan, 2014 - Rev. 1.1
| ||
Seiten | Gesamt 3 Seiten | |
PDF Download | [ WSB5503W Schematic.PDF ] |
Teilenummer | Beschreibung | Hersteller |
WSB5503W | Middle Power Schottky Barrier Diode | Will Semiconductor |
Teilenummer | Beschreibung | Hersteller |
CD40175BC | Hex D-Type Flip-Flop / Quad D-Type Flip-Flop. |
Fairchild Semiconductor |
KTD1146 | EPITAXIAL PLANAR NPN TRANSISTOR. |
KEC |
www.Datenblatt-PDF.com | 2020 | Kontakt | Suche |