|
|
Teilenummer | P1260ETFS |
|
Beschreibung | N-Channel Field Effect Transistor | |
Hersteller | NIKO-SEM | |
Logo | ||
Gesamt 4 Seiten NIKO-SEM
N-Channel Enhancement Mode
P1260ETF:TO-220F
P1260ETFS:TO-220FS
Field Effect Transistor Halogen-Free & Lead-Free
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
600V
670mΩ
ID
12A
D
G
S
ABSOLUTE MAXIMUN RATINGS(TA=25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current2
Pulsed Drain Current1
Avalanche Current 3
Avalanche Energy3
TC = 25 °C
TC = 100 °C
VDS
VGS
ID
IDM
IAS
EAS
Power Dissipation
TC = 25 °C
TC = 100 °C
Operating Junction & Storage Temperature Range
PD
Tj, Tstg
1. GATE
2. DRAIN
3. SOURCE
LIMITS
600
±30
12
7.6
48
7.3
264
48
19
-55 to 150
UNITS
V
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL
Junction-to-Case
RJC
Junction-to-Ambient
RJA
1Pulse width limited by maximum junction temperature.
2Ensure that the channel temperature does not exceed 150°C.
3VDD = 50V , L = 10mH ,starting TJ = 25°C.
MAXIMUM
2.6
62.5
UNITS
°C / W
°C / W
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
STATIC
LIMITS
UNIT
MIN TYP MAX
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Gate Voltage Drain Current
V(BR)DSS
VGS(th)
IGSS
IDSS
VGS = 0V, ID = 250A
600
VDS = VGS, ID = 250A
2 2.8 4
VDS = 0V, VGS = ±30V
±100
VDS = 600V, VGS = 0V , TC = 25 °C
1
VDS = 480V, VGS = 0V , TC = 100 °C
10
V
nA
A
REV 1.0
G-17-4
1
| ||
Seiten | Gesamt 4 Seiten | |
PDF Download | [ P1260ETFS Schematic.PDF ] |
Teilenummer | Beschreibung | Hersteller |
P1260ETF | N-Channel Field Effect Transistor | NIKO-SEM |
P1260ETFS | N-Channel Field Effect Transistor | NIKO-SEM |
Teilenummer | Beschreibung | Hersteller |
CD40175BC | Hex D-Type Flip-Flop / Quad D-Type Flip-Flop. |
Fairchild Semiconductor |
KTD1146 | EPITAXIAL PLANAR NPN TRANSISTOR. |
KEC |
www.Datenblatt-PDF.com | 2020 | Kontakt | Suche |