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Teilenummer | PB5G2JU |
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Beschreibung | Dual N-Channel Enhancement Mode MOSFET | |
Hersteller | UNIKC | |
Logo | ||
Gesamt 8 Seiten PB5G2JU
Dual N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
20V 9.5mΩ @VGS = 4.5V
ID
12A
TDFN 2X3-6
1,2:S1
3:G1
4:G2
5,6:S2
7:D1/D2
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 20
Gate-Source Voltage
VGS ±10
Continuous Drain Current
Pulsed Drain Current1
TA = 25 °C
TA= 70 °C
ID
IDM
12
9.4
42
Avalanche Current
IAS 23
Avalanche Energy3
EAS 26
Power Dissipation
TA= 25 °C
TA= 70°C
PD
2.4
1.5
Junction & Storage Temperature Range
Tj, Tstg
-55 to 150
UNITS
V
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL MAXIMUM
Junction-to-Ambient2
RqJA
52
1Pulse width limited by maximum junction temperature.
2The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper,in a still air
environment with TA =25°C.
UNITS
°C / W
REV 1.0
1 2015/10/21
PB5G2JU
Dual N-Channel Enhancement Mode MOSFET
A. Marking Information ( 此产品代码为:D8 )
B. Tape&Reel Information:3000pcs/Reel
REV 1.0
6 2015/10/21
6 Page | ||
Seiten | Gesamt 8 Seiten | |
PDF Download | [ PB5G2JU Schematic.PDF ] |
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