|
|
Teilenummer | P1615ATFA |
|
Beschreibung | N-Channel Enhancement Mode MOSFET | |
Hersteller | UNIKC | |
Logo | ||
Gesamt 8 Seiten P1615ATFA
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
150V
16.5mΩ @VGS = 10V
ID
42A
TO-220F
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 150
Gate-Source Voltage
VGS ±25
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
ID
IDM
42
27
150
Avalanche Current
IAS 30
Avalanche Energy
L = 1mH
EAS 458
Power Dissipation
TC = 25 °C
TC = 100 °C
PD
74
29
Junction & Storage Temperature Range
Tj, Tstg
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
Junction-to-Ambient
1Pulse width limited by maximum junction temperature.
SYMBOL
RqJC
RqJA
TYPICAL
MAXIMUM
1.7
62.5
UNITS
°C / W
REV 1.0
1 2017/1/19
P1615ATFA
N-Channel Enhancement Mode MOSFET
A. Marking Information
B. Tape&Reel Information:50pcs/Tube(2000pcs/Box)
REV 1.0
6 2017/1/19
6 Page | ||
Seiten | Gesamt 8 Seiten | |
PDF Download | [ P1615ATFA Schematic.PDF ] |
Teilenummer | Beschreibung | Hersteller |
P1615ATFA | N-Channel Field Effect Transistor | NIKO-SEM |
P1615ATFA | N-Channel Enhancement Mode MOSFET | UNIKC |
Teilenummer | Beschreibung | Hersteller |
CD40175BC | Hex D-Type Flip-Flop / Quad D-Type Flip-Flop. |
Fairchild Semiconductor |
KTD1146 | EPITAXIAL PLANAR NPN TRANSISTOR. |
KEC |
www.Datenblatt-PDF.com | 2020 | Kontakt | Suche |