(PDF) P1070ETF Datasheet - N-Channel Enhancement Mode MOSFET

Número de pieza	P1070ETF
Descripción	N-Channel Enhancement Mode MOSFET
Fabricantes	UNIKC
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No Preview Available ! P1070ETF N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 700V 0.91mΩ @VGS = 10V ID 10A TO-220F 100% UIS tested ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 700 Gate-Source Voltage VGS ±30 Continuous Drain Current2,4 Pulsed Drain Current1,2 Avalanche Current3 Avalanche Energy3 TC = 25 °C TC = 100 °C ID IDM IAS EAS 10 6 30 5 125 Power Dissipation TC = 25 °C TC = 100 °C PD 46 18 Operating Junction & Storage Temperature Range Tj, Tstg -55 to 150 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL Junction-to-Case RqJC Junction-to-Ambient RqJA 1Pulse width limited by maximum junction temperature. 2Limited only by maximum temperature allowed. 3VDD = 50V , L = 10mH, starting TJ = 25°C. 4This characteristics assumes the die are assembled in TO-220 packages. TYPICAL MAXIMUM 2.7 62.5 UNITS °C / W REV 1.0 1 2017/1/22 1 page P1070ETF N-Channel Enhancement Mode MOSFET *因各家封装模具不同而外观略有所差异，不影响电性及Layout。 REV 1.0 5 2017/1/22 5 Page

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PDF P1070ETF Data sheet ( Hoja de datos )