|
|
Teilenummer | P3710BT |
|
Beschreibung | N-Channel Enhancement Mode MOSFET | |
Hersteller | UNIKC | |
Logo | ||
Gesamt 8 Seiten P3710BT
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
100V
37mΩ @VGS = 10V
ID
31A
TO-220
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 100
Gate-Source Voltage
VGS ±20
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
ID
IDM
31
20
75
Avalanche Current
Avalanche Energy2
IAS 16
EAS 128
Power Dissipation
TC = 25 °C
TC = 100 °C
PD
78
21
Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
1Pulse width limited by maximum junction temperature.
2Starting Tj = 25 °C,L= 1mH,VDD= 50V
SYMBOL
RqJC
TYPICAL
MAXIMUM UNITS
1.6 °C / W
REV 1.0
1 2017/1/16
P3710BT
N-Channel Enhancement Mode MOSFET
A. Marking Information
B. Tape&Reel Information:50pcs/Tube
REV 1.0
6 2017/1/16
6 Page | ||
Seiten | Gesamt 8 Seiten | |
PDF Download | [ P3710BT Schematic.PDF ] |
Teilenummer | Beschreibung | Hersteller |
P3710BD | N-Channel Enhancement Mode MOSFET | UNIKC |
P3710BK | N-Channel Field Effect Transistor | NIKO-SEM |
P3710BT | N-Channel Field Effect Transistor | NIKO-SEM |
P3710BT | N-Channel Enhancement Mode MOSFET | UNIKC |
P3710BTF | N-Channel Field Effect Transistor | NIKO-SEM |
Teilenummer | Beschreibung | Hersteller |
CD40175BC | Hex D-Type Flip-Flop / Quad D-Type Flip-Flop. |
Fairchild Semiconductor |
KTD1146 | EPITAXIAL PLANAR NPN TRANSISTOR. |
KEC |
www.Datenblatt-PDF.com | 2020 | Kontakt | Suche |