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Teilenummer | EMF5 |
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Beschreibung | Dual Transistors | |
Hersteller | JCET | |
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Gesamt 4 Seiten JC(T
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-563 Plastic-Encapsulate Transistors
EMF5
Dual Transistors (PNP+NPN)
FEATURES
z 2SA2018 and DTC144E are housed independently in a package.
z Mounting possible with SOT-563 automatic mounting machines.
z Transistor elements are independent, eliminating interference.
z Mounting cost and area be cut in half.
Marking: F5
SOT-563
Tr1 Absolute maximum ratings (Ta=25℃)
Symbol
VCBO
VCEO
VEBO
IC
PC
TJ
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
-15
-12
-6
-500
150
150
-55-150
Units
V
V
V
mA
mW
℃
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
Test conditions
V(BR)CBO IC=-10μA, IE=0
V(BR)CEO IC=-1mA, IB=0
V(BR)EBO IE=-10μA, IC=0
ICBO
VCB=-15V, IE=0
IEBO VEB=-6V, IC=0
hFE VCE=-2V, IC=-10mA
VCE(sat) IC=-200mA, IB=-10mA
fT VCE=-2V, IE=-10mA, f=100MHz
Cob VCB=-10V, IE=0, f=1MHz
Min Typ Max Unit
-15 V
-12 V
-6 V
-0.1 μA
-0.1 μA
270 680
-0.25
V
260 MHz
6.5 pF
www.cj-elec.com
1
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Seiten | Gesamt 4 Seiten | |
PDF Download | [ EMF5 Schematic.PDF ] |
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