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PDF CJQ6601 Data sheet ( Hoja de datos )

Número de pieza CJQ6601
Descripción N-channel and P-channel Complementary MOSFETS
Fabricantes JCET 
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No Preview Available ! CJQ6601 Hoja de datos, Descripción, Manual

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOP8 Plastic-Encapsulate MOSFETS
CJQ6601 N-channel and P-channel Complementary MOSFETS
V(BR)DSS
30 V
-30V
RDS(on)MAX
  35mΩ@10V 
40mΩ@4.5V 
52mΩ@2.5V  
  65mΩ@-10V 
75mΩ@-4.5V 
90mΩ@-2.5V
 
ID
5.8 A
-4.2A
SOP8
DESCRIPTIONS
The Device uses advanced trench technology to provide excellent
RDS(ON) and low gate charge. The complementary MOSFETs form a
high-speed power inverter, suitable for a multitude of applications.
FEATURES
Including a N-ch CJ3400 MOS and a P-ch
Surface mount package
CJ3401 MOS (independently) in a package
Low RDS(on)
APPLICATIONS
Suitable for a multitude of applications.
High-speed power inverter
MARKING:
Q6601= Device code
Solid dot=Pin1 indicator
EQUIVALENT CIRCUIT
D1 D1 D2 D2
8 76 5
Solid dot = Green molding compound device,
if none, the normal device
YY= Code
MAXIMUM RATINGS (Ta=25unless otherwise noted)
12 34
S1 G1 S2 G2
Symbol
Parameter
Value
N-ch MOS
P-ch MOS
VDS Drain-Source Voltage
30 -30
VGS Gate-Source Voltage
±12 ±12
ID Drain Current -Continuous(Note1)
5.8
-4.2
IDM Drain Current - Pulse(Note3)
23.2 -16.8
Power Dissipation, Temperature and Thermal Resistance
PD
RθJA
Power Dissipation
Thermal Resistance from Junction to Ambient
1.4
89
Tj Junction Temperature
Tstg Storage Temperature
150
-55~+150
TL Lead Temperature
260
Unit
V
V
A
A
W
/W
ZZZFMHOHFFRP
1
AMar6

1 page




CJQ6601 pdf
SOP8 Package Outline Dimensions
SOP8 Suggested Pad Layout
Symbol
A
A1
A2
b
c
D
e
E
E1
L
θ
Dimensions In Millimeters
Min Max
--- 1.750
0.100
0.250
1.250
1.500
0.330
0.510
0.170
0.250
4.800
5.000
1.270(BSC)
5.800
6.200
3.800
4.000
0.400
1.270
0° 8°
Dimensions In Inches
Min Max
--- 0.069
0.004
0.010
0.049
0.059
0.013
0.020
0.007
0.010
0.189
0.197
0.050(BSC)
0.228
0.244
0.150
0.157
0.016
0.050
0° 8°
ZZZFMHOHFFRP
5
AMar6

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