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P2610BT Schematic ( PDF Datasheet ) - UNIKC

Teilenummer P2610BT
Beschreibung N-Channel Enhancement Mode MOSFET
Hersteller UNIKC
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Gesamt 5 Seiten
P2610BT Datasheet, Funktion
P2610BT
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
100V
26.8mΩ @VGS = 10V
ID
36A
TO-220
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 100
Gate-Source Voltage
VGS ±20
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
ID
IDM
36
23
70
Avalanche Current
IAS 11
Avalanche Energy
L = 0.1mH
EAS
6
Power Dissipation
TC = 25 °C
TC = 100 °C
PD
83
33
Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
Junction-to-Ambient
1Pulse width limited by maximum junction temperature.
SYMBOL
RqJC
RqJA
TYPICAL
MAXIMUM
1.5
62.5
UNITS
°C / W
REV 1.0
1 2014/10/14





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