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P2060ZT Schematic ( PDF Datasheet ) - UNIKC

Teilenummer P2060ZT
Beschreibung N-Channel Enhancement Mode MOSFET
Hersteller UNIKC
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Gesamt 8 Seiten
P2060ZT Datasheet, Funktion
P2060ZT
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
600V
190mΩ @VGS = 10V
ID
20A
TO-220
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 600
Gate-Source Voltage
VGS ±30
Continuous Drain Current2
Pulsed Drain Current1
Avalanche Current3
Avalanche Energy3
TC = 25 °C
TC = 100 °C
ID
IDM
IAS
EAS
20
12
59
4
320
Power Dissipation
TC = 25 °C
TC = 100 °C
PD
48
19
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
Junction-to-Ambient
1Pulse width limited by maximum junction temperature.
2Ensure that the channel temperature does not exceed 150°C.
3VDD = 50V , L = 40mH ,starting TJ = 25°C.
SYMBOL
RqJC
RqJA
TYPICAL
MAXIMUM UNITS
1
°C / W
62.5
REV 1.0
1 2017/1/18






P2060ZT Datasheet, Funktion
P2060ZT
N-Channel Enhancement Mode MOSFET
A. Marking Information
B. Tape&Reel Information:50pcs/Tube
REV 1.0
6 2017/1/18

6 Page







SeitenGesamt 8 Seiten
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