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Teilenummer | P1260AT |
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Beschreibung | N-Channel Enhancement Mode MOSFET | |
Hersteller | UNIKC | |
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Gesamt 5 Seiten P1260AT
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
600V
0.65Ω @VGS = 10V
ID
12A
TO-220
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 600
Gate-Source Voltage
VGS ±30
Continuous Drain Current2
Pulsed Drain Current1, 2
Avalanche Current3
Avalanche Energy3
TC = 25 °C
TC = 100 °C
L = 10mH
ID
IDM
IAS
EAS
12
8.5
48
7.4
277
Power DissipationA
TC = 25 °C
TC = 100 °C
PD
223
89
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
Junction-to-Ambient
1Pulse width limited by maximum junction temperature.
2Limited only by maximum temperature allowed.
3VDD = 60V, starting TJ = 25°C
SYMBOL
RqJC
RqJA
TYPICAL
MAXIMUM
0.56
62.5
UNITS
°C / W
Ver 1.0
1 2012/4/16
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Seiten | Gesamt 5 Seiten | |
PDF Download | [ P1260AT Schematic.PDF ] |
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