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Teilenummer | P0550BT |
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Beschreibung | N-Channel Enhancement Mode MOSFET | |
Hersteller | UNIKC | |
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Gesamt 5 Seiten P0550BT
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
500V
1.75Ω @VGS = 10V
ID
4.5A
TO-220
100% UIS tested
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
UNITS
Drain-Source Voltage
Gate-Source Voltage
VDS
500
V
VGS ±30
Continuous Drain Current2
Pulsed Drain Current1, 2
TC = 25 °C
TC = 100 °C
ID
IDM
4.5
3
A
15
Avalanche Current
IAS 5
Avalanche Energy
L = 8.7mH
EAS
109 mJ
Power Dissipation
TC = 25 °C
TC = 100 °C
PD
89
W
36
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
Junction-to-Ambient
1Pulse width limited by maximum junction temperature.
2Limited only by maximum temperature allowed.
SYMBOL
RqJC
RqJA
TYPICAL
MAXIMUM
1.4
62.5
UNITS
°C / W
Ver 1.0
1 2012/4/16
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Seiten | Gesamt 5 Seiten | |
PDF Download | [ P0550BT Schematic.PDF ] |
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